BC547 Datasheet
NPN Epitaxial Silicon Transistor
Download: BC547 Datasheet 
BC547
NPN Epitaxial Silicon Transistor
BC546/547/548/549/550
Switching and Amplifier
High Voltage: BC546, VCEO=65V
Low Noise: BC549, BC550
Complement to BC556 ... BC560
Absolute
MAXIMUM RATINGS Ta=25 C unless otherwise noted
Symbol
Parameter
Collector-Base Voltage : BC546 : BC547/550 : BC548/549
Collector-Emitter Voltage : BC546 : BC547/550 : BC548/549
Emitter-Base Voltage : BC546/547 : BC548/549/550
Collector Current (dc) Collector Dissipation Junction Temperature Storage Temperature
1. Collector 2. Base 3. Emitter
Value 80 50 30 65 45 30 6 5 100 500 150
-65 ~ 150
Units V
mW C C
Electrical Characteristics Ta=25 C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO hFE VCE (sat)
VBE (sat)
VBE (on)
fT Cob Cib NF
Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage
BC547 Datasheet
NPN General Purpose Amplifier
Download: BC547 Datasheet
BC547
NPN General Purpose Amplifier
BC547 / BC547A / BC547B / BC547C
BC547 BC547A BC547B BC547C
Discrete POWER & Signal Technologies
This Device Is Designed For Use As General Purpose Amplifiers And Switches Requiring Collector
currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.
Absolute
MAXIMUM RATINGS* TA = 25 C unless otherwise noted
Symbol
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
-55 to +150
*these Ratings Are Limiting Values Above Which The Serviceability Of Any Semiconductor Device May Be
impaired.
Notes: 1) These Ratings Are Based On A Maximum Junction Temperature Of 150 Degrees C. 2) These Are
steady state limits. The factory should be consulted on
Applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25 C unless otherwise noted
Symbol
Characteristic
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
BC547 Datasheet
NPN General Purpose Amplifier
Download: BC547 Datasheet
BC547
NPN General Purpose Amplifier
BC547 / BC547A / BC547B / BC547C
BC547 BC547A BC547B BC547C
This Device Is Designed For Use As General Purpose Amplifiers And Switches Requiring Collector
currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.
Absolute
MAXIMUM RATINGS* TA = 25 C unless otherwise noted
Symbol
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
-55 to +150
*these Ratings Are Limiting Values Above Which The Serviceability Of Any Semiconductor Device May Be
impaired.
Notes: 1) These Ratings Are Based On A Maximum Junction Temperature Of 150 Degrees C. 2) These Are
steady state limits. The factory should be consulted on
Applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25 C unless otherwise noted
Symbol
Characteristic
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
BC547 / A / B / C 625 5.0 83.3
BC547 Datasheet
NPN Epitaxial Silicon Transistor
Download: BC547 Datasheet
BC547
NPN Epitaxial Silicon Transistor
BC546/547/548/549/550
Switching and
Applications
High Voltage: BC546, VCEO=65V
Low Noise: BC549, BC550
Complement to BC556 ... BC560
Absolute
MAXIMUM RATINGS Ta=25 C unless otherwise noted
Symbol
Parameter
Collector-Base Voltage : BC546 : BC547/550 : BC548/549
Collector-Emitter Voltage : BC546 : BC547/550 : BC548/549
Emitter-Base Voltage : BC546/547 : BC548/549/550
Collector Current (dc) Collector Power Dissipation Junction Temperature Storage Temperature
1. Collector 2. Base 3. Emitter
Value 80 50 30 65 45 30 6 5 100 500 150
-65 ~ 150
Units V
mW C C
Electrical Characteristics Ta=25 C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO hFE VCE (sat)
VBE (sat)
VBE (on)
fT Cob Cib NF
BC547 Datasheet
NPN EPITAXIAL SILICON TRANSISTOR
Download: BC547 Datasheet
BC547
NPN EPITAXIAL SILICON TRANSISTOR
BC546/547/548/549/550
SWITCHING AND AMPLIFIER
HIGH VOLTAGE: BC546, VCEO=65V
LOW NOISE: BC549, BC550
Complement to BC556 ... BC560
ABSOLUTE
MAXIMUM RATINGS (TA=25 C)
Characteristic
Symbol
Rating
Collector Base Voltage : BC546 : BC547/550 : BC548/549
Collector-Emitter Voltage : BC546 : BC547/550 : BC548/549/550
Emitter-Base Voltage : BC546/547 : BC548/549/550
Collector Current (dc) Collector Dissipation Junction Temperature Storage Temperature
-65 ~ 150
TO-92 1. Collector 2. Base 3. Emitter
ELECTRICAL CHARACTERISTICS (TA=25 C)
Characteristic
Symbol
Test Conditions
Collector Cut-off Current DC Current Gain Collector Emitter Saturation Voltage
Collector Base Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
Emitter Base Capacitance
BC547 Datasheet
General Purpose Bipolar Transistor, NPN, 45V, TO-92, 3-Pin
Download: BC547 Datasheet
BC547
General Purpose Bipolar Transistor, NPN, 45V, TO-92, 3-Pin
BC546 thru BC548
Small Signal Transistors (NPN)
min.0.492 (12.5) 0.181 (4.6)
TO-226AA (TO-92)
0.181 (4.6)
0.142 (3.6)
FEATURES
NPN Silicon Epitaxial Planar Transistors
These Transistors Are Subdivided Into Three Groups A, B, And C According To Their Current Gain. The
Type Bc546 Is Available In Groups A And B, However, The Types Bc547 And Bc548 Can Be Supplied In All
Three Groups. As Complementary Types The Pnp Transistors Bc556...bc558 Are Recommended.
On Special Request, These Transistors Are Also Manufactured In The Pin Configuration To-18.
max. 0.022 (0.55)
0.098 (2.5)
Dimensions in inches and (millimeters)
Bottom View
MECHANICAL DATA
Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options:
E6/Bulk - 5K per container, 20K/box E7/4K per Ammo mag., 20K/box
Maximum Ratings & Thermal Characteristics Ratings At 25 C Ambient Temperature Unless Otherwise
specified.
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
BC546, BC547 BC548
Collector Current
Peak Collector Current
BC547 Datasheet
Small Signal Transistors (NPN)
Download: BC547 Datasheet
BC547
Small Signal Transistors (NPN)
BC546 THRU BC549
.181 (4.6)
.142 (3.6)
min..492 (12.5) .181 (4.6)
max. .022 (0.55) .098 (2.5)
Dimensions in inches and (millimeters)
FEATURES
NPN Silicon Epitaxial Planar Transistors
These transistors are subdivided into three groups
A, B And C According To Their Current Gain. The Type Bc546 Is Available In Groups A And B, However,
The Types Bc547 And Bc548 Can Be Supplied In All Three Groups. The Bc549 Is A Low-noise Type And
Available In Groups B And C. As Complementary Types, The Pnp Transistors Bc556 ... Bc559 Are
recommended.
On special request, these transistors are also
manufactured in the pin configuration TO-18.
MECHANICAL DATA
Case: TO-92 Plastic Package Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified
Symbol
Collector-Base Voltage
BC546 VCBO
BC547 VCBO
BC548, BC549 VCBO
Collector-Emitter Voltage
BC546 VCES
BC547 VCES
BC548, BC549 VCES
Collector-Emitter Voltage
BC547 Datasheet
NPN Silicon Amplifier Transistor 625mW
Download: BC547 Datasheet
BC547
NPN Silicon Amplifier Transistor 625mW
- - omponents 21201 Itasca Street Chatsworth
! "# $ % ! "#
FEATURES
l Through Hole Package l 150oC Junction Temperature
Pin Configuration Bottom View
MECHANICAL DATA
l Case: TO-92, Molded Plastic l Polarity: indicated as above.
MAXIMUM RATINGS @ 25oC Unless Otherwise Specified
Charateristic
Symbol Value Unit
Collector-Emitter Voltage BC546
BC547 VCEO 45
Collector-Base Voltage BC546
BC547 VCBO 50
Emitter-Base Voltage
VEBO 6.0
Collector Current(DC) Power Dissipation@TA=25oC
Power Dissipation@TC=25oC Thermal Resistance, Junction to Ambient Air
100 mA
625 mW 5.0 mW/oC
1.5 W 12 mW/oC
200 oC/W
Thermal Resistance, Junction to Case
RqJC 83.3 oC/W
BC546,B BC547,A,B,C BC548,A,B,C
BC547 Datasheet
CASE 29-04, STYLE 17 TO-2 (TO-226AA)
Download: BC547 Datasheet
BC547
CASE 29-04, STYLE 17 TO-2 (TO-226AA)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC546/D
Amplifier Transistors
NPN Silicon
COLLECTOR 1
BC546, B BC547, A, B, C BC548, A, B, C
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating
BC Symbol 546 547 548 Unit
Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -
Continuous Total Device Dissipation @ TA = 25 C
Derate above 25 C
VCEO VCBO VEBO
65 45 30 Vdc
80 50 30 Vdc
mW/ C
Total Device Dissipation @ TC = 25 C
Derate above 25 C
mW/ C
Operating and Storage Junction Temperature Range
- 55 to +150
THERMAL CHARACTERISTICS
Characteristic
BC547 Datasheet
NPN GENERAL PURPOSE TRANSISTOR
Download: BC547 Datasheet
BC547
NPN GENERAL PURPOSE TRANSISTOR
BC546,BC547,BC548 SERIES
VOLTAGE 30V/45V/65V POWER 625 mWatts
FEATURES
NPN epitaxial silicon, planar design
Collector current IC = 100mA
Complimentary (PNP) device:BC556,BC557,BC558 Series
Pb free product :99% Sn above can meet RoHS
environment substance directive request
MECHANICAL DATA
Case: TO-92
Terminals: Solderable per MIL-STD-202, Method 208
Approx Weight : 0.02grams
Device Marking :
BC546A=546A BC547A=547A BC548A=548A
BC546B=546B BC547B=547B BC548B=548B
BC547C=547C BC548C=548C
ABSOLUTE
MAXIMUM RATINGS
PARAMETER Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage Collector Current - Continuous Max Power Dissipation Storage Temperature
Junction Temperature
BC546 BC547 BC548
THERMAL CHARACTERISTICS
PARAMETER Thermal Resistance, Junction to Ambient
Symbol VC E O
VC B O
VE B O IC
65 45 30 80 50 30 6.0 5.0
-55 to 150
Symbol R JA
Value 200
BC547 Datasheet
NPN General Purpose Transistor
Download: BC547 Datasheet
BC547
NPN General Purpose Transistor
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC546; BC547 NPN general purpose transistors
Product speci cation Supersedes data of 1997 Mar 04
1999 Apr 15
Philips Semiconductors
NPN general purpose transistors
Product speci cation
BC546; BC547
FEATURES
Low current (max. 100 mA)
Low voltage (max. 65 V).
Applications
General purpose switching and amplification.
Description Npn Transistor In A To-92; Sot54 Plastic Package. Pnp Complements: Bc556 And Bc557.
PINNING
PIN 1 2 3
emitter base collector
Description
handbook, halfpage1 2 3
MAM182
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute
MAXIMUM RATING System (IEC 134).
SYMBOL
PARAMETER
BC547 Datasheet
NPN General Purpose Transistors
Download: BC547 Datasheet
BC547
NPN General Purpose Transistors
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC546; BC547 NPN general purpose transistors
Product speci cation Supersedes data of 1999 Apr 15
2004 Nov 25
Philips Semiconductors
Product speci cation
BC546; BC547
FEATURES
Low current (max. 100 mA)
Low voltage (max. 65 V).
Applications
General purpose switching and amplification.
Description Npn Transistor In A To-92; Sot54 Plastic Package. Pnp Complements: Bc556 And Bc557.
PINNING
PIN 1 2 3
emitter base collector
Description
handbook, halfpage1 2 3
MAM182
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
ORDERING INFORMATION
TYPE NUMBER
BC546A BC546B BC547 BC547B BC547C
NAME SC-43A
PACKAGE
BC547 Datasheet
NPN Silicon Planar Epitaxial Transistors
Download: BC547 Datasheet
BC547
NPN Silicon Planar Epitaxial Transistors
BC546 BC547 BC548
TO-92 SMD Package
Absolute
MAXIMUM RATINGS (Ta = 25 oC unless specified otherwise)
Description Collector Base Voltage Collector Emmitter Voltage (vbe = 0v) Collector Emitter Voltage
Emitter Base Voltage Collector Current (dc) Collector Current - Peak Emitter Current - Peak Base
Current - Peak Total Power Dissipation Up To Tamb = 25 Oc Storge Temperature Junction Temperature
SYMBOL VCBO VCES VCEO VEBO IC ICM IEM IBM
BC546 80 65 6
Thermal Resistance From junction to ambient
Rth(j-a)
BC547 50 45 6 100 200
-55 to +150
BC548 30 5
UNITS V
1 of 3
BC546 BC547 BC548
Electrical Characteristics (Ta=25 oC unless otherwise specified)
Description
SYMBOL TEST CONDITION
Collector Emitter Voltage
BC546/BC546A/BC546B/BC546C
IC = 1mA, IB = 0
BC547/BC547A/BC547B/BC547C
BC548/BC548A/BC548B/BC548C
Collector Base Voltage
BC547 Datasheet
Amplifier Transistors NPN Silicon
Download: BC547 Datasheet
BC547
Amplifier Transistors NPN Silicon
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol BC546 BC547 BC548 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation @ TA = 25 C
Derate above 25 C
mW/ C
Total Device Dissipation @ TC = 25 C
Derate above 25 C
mW/ C
Operating and Storage Junction
-55 to +150
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case
RqJA RqJC
BC546, B BC547, A, B, C BC548, A, B, C
BC547 Datasheet
Cross Reference Guide 1998
Download: BC547 Datasheet
BC547
Cross Reference Guide 1998
Cross Reference
Leaded Devices
1n4001 1n4002 1n4003 1n4004 1n4001 (2x) 1n4002 (2x) 1n4003 (2x) 1n4004 (2x) 1n4148
1N4148 (2x)
1N4148 (4x)
1n914 2n2222 2n2222a 2n2484 2n2857 2n2907 2n2907a 2n3019 2n3053 2n3440 2n3563 2n3904
SMD-Packages
SOD-123
SOD-323
SCD-80
SOT-23
SOT143
BAS 16-02W
BAS 16-03W
BAS16 BAL/BAR74 BAL/BAR99 BAV70 BAV74 BAV99 BAW56
SMBD914 SMBT2222 SMBT2222A BC846B BFS17P SMBT2907 SMBT2907A
BAS28 BAW100
BGX50A (Bridge)
BSS79 BFN26 BSS79B SMBT3904
2N3906 2N4032 2N4036 2N4037 2N4123 2N4124 2N4125
SMBT3906 BC856
BSS81B SMBT4124 BSS80B
SOT-323
SOT-343
BAS16W
BAV70W BAV74W BAV99W BAW56W
BAS28W