BCW89 Datasheet
PNP General Purpose Amplifier
Download: BCW89 Datasheet 
BCW89
PNP General Purpose Amplifier
This Device Is Designed For General Purpose Medium Power Amplifiers And Switches Requiring Collector
currents to 300mA.
Sourced from process 68.
SOT-23 Mark: H3
1. Base 2. Emitter 3. Collector
Absolute
MAXIMUM RATINGS
* TC=25 C unless otherwise noted
Symbol
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector current
- Continuous
Junction and Storage Temperature
* These Ratings Are Limiting Values Above Which The Serviceability Of Any Semiconductor Device May
be impaired.
Value -60 -60 -5.0 -500
-55 ~ +150
Notes: 1) These Ratings Are Based On A Maximum Junction Temperature Of 150 Degrees C. 2) These Are
state limits. The factory should be consulted on
Applications involving pulsed or low duty cycle operations.
Units V mA C
Electrical Characteristics TC=25 C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
BCW89 Datasheet
General Purpose Transistor
Download: BCW89 Datasheet
BCW89
General Purpose Transistor
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE
Application. SWITCHING
Application.
Features Super Mini Packaged Transistors For Hybrid Circuits. For Complementary With Npn Type
BCW71/72, BCV71.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
BCW69/70 BCW89
Collector-Emitter Voltage
BCW69/70 BCW89
Emitter-base Voltage Collector Current Emitter Current Collector Power Dissipation Junction
Temperature Storage Temperature Range
RATING -50 -60 -45 -60 -5 -100 200 150
-65 150
V mA mW
BCW69/70/89
EPITAXIAL PLANAR PNP TRANSISTOR
1. EMITTER 2. BASE 3. COLLECTOR
DIM A B C D E G H J
MILLIMETERS 2.93+_ 0.20
1.30+0.20/-0.15 1.30 MAX
0.45+0.15/-0.05 2.40+0.30/-0.20
1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
SOT-23
C N K J
BCW89 Datasheet
PNP General Purpose Transistor
Download: BCW89 Datasheet
BCW89
PNP General Purpose Transistor
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BCW89 PNP general purpose transistor
Product speci cation Supersedes data of 1997 Mar 11
1999 Apr 15
Philips Semiconductors
Product speci cation
FEATURES
Low current (max. 100 mA)
Low voltage (max. 60 V).
Applications
General purpose switching and amplification.
PINNING
PIN 1 2 3
base emitter collector
Description
Description PNP transistor in a SOT23 plastic package.
MARKING
TYPE NUMBER BCW89
MARKING CODE(1) H3
1. = p : Made in Hong Kong. = t : Made in Malaysia.
handbook, halfpage
Top view
MAM256
BCW89 Datasheet
BCW89 - PNP General Purpose Transistor - FT Min: 100 MHz; HFE Max: 260 ; HFE Min:
Download: BCW89 Datasheet
BCW89
BCW89 - PNP General Purpose Transistor - FT Min: 100 MHz; HFE Max: 260 ; HFE Min:
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BCW89 PNP general purpose transistor
Product data sheet Supersedes data of 1997 Mar 11
1999 Apr 15
NXP Semiconductors
PNP general purpose transistor
Product data sheet
FEATURES
Low current (max. 100 mA)
Low voltage (max. 60 V).
Applications
General purpose switching and amplification.
PINNING
PIN 1 2 3
base emitter collector
Description
Description PNP transistor in a SOT23 plastic package.
MARKING
TYPE NUMBER BCW89
MARKING CODE(1) H3
1. = p : Made in Hong Kong. = t : Made in Malaysia.
handbook, halfpage
Top view
MAM256
BCW89 Datasheet
PNP General Purpose Transistors - SOT-23
Download: BCW89 Datasheet
BCW89
PNP General Purpose Transistors - SOT-23
SMD Type
TransistIoCrs
Product specification
FEATURES
Low current (max. 100 mA). Low voltage (max. 60 V).
+0.1 2.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
0.95+0.1 -0.1.9+0.1 -0.1
Absolute
MAXIMUM RATINGS Ta = 25
Parameter
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation
Storage temperature
-65 to +150
Junction temperature
Operating ambient temperature
BCW89 Datasheet
PNP General Purpose Transistors
Download: BCW89 Datasheet
BCW89
PNP General Purpose Transistors
SMD Type
TransistIoCrs
PNP General Purpose Transistors BCW89
FEATURES
Low current (max. 100 mA). Low voltage (max. 60 V).
+0.1 2.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
0.95+0.1 -0.1.9+0.1 -0.1
Absolute
MAXIMUM RATINGS Ta = 25
Parameter
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation
Storage temperature
-65 to +150
Junction temperature