BD140 Datasheet
Leaded Power Transistor General Purpose
Download: BD140 Datasheet 
BD140
Leaded Power Transistor General Purpose
BD136 BD138 BD140
DATA SHEET
PNP SILICON TRANSISTORS
JEDEC TO-126 CASE
Description: The Central Semiconductor Bd136, Bd138, And Bd140 Types Are Pnp Silicon Epitaxial
Planar Transistors designed for audio amplifier and switching
Applications.
MAXIMUM RATINGS: (TC=25 C unless otherwise noted)
Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Collector Current Peak
Collector Current Base Current Peak Base Current
Power Dissipation (tmb 70 C) Power Dissipation (ta=25 C) Operating And Storage Junction
Temperature
Thermal Resistance
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD
BD136 45
BD138 60 5.0 1.5 2.0.5 1.0 8.0
-65 to +150 10
BD140 100
UNIT V A W
C C/W C/W
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN MAX MIN MAX
VCB=30V
VCB=30V, TC=125 C
VEB=5.0V
IC=30mA
VCE(SAT)
BD140 Datasheet
PNP Epitaxial Silicon Transistor - Pol=PNP / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-250
Download: BD140 Datasheet
BD140
PNP Epitaxial Silicon Transistor - Pol=PNP / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-250
BD136/138/140
Medium Power Linear and Switching
Applications
Complement to BD135, BD137 and BD139 respectively
PNP Epitaxial Silicon Transistor
Absolute
MAXIMUM RATINGS TC=25 C unless otherwise noted
Symbol
Parameter
Collector-Base Voltage
: BD136 : BD138 : BD140
Collector-Emitter Voltage
: BD136 : BD138 : BD140
Emitter-base Voltage Collector Current (dc) Collector Current (pulse) Base Current Collector
Dissipation (tc=25 C) Collector Dissipation (ta=25 C) Junction Temperature Storage Temperature
TO-126
1. Emitter 2.Collector 3.Base
Value - 45 - 60 - 80 - 45 - 60 - 80 - 5 - 1.5 - 3.0 - 0.5 12.5 1.25 150
- 55 ~ 150
Units V A W C C
Electrical Characteristics TC=25 C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
BD140 Datasheet
Plastic Medium Power Silicon PNP Transistor - Pol=PNP / Pkg=TO126 / Vceo=80 / Ic=1 /
Download: BD140 Datasheet
BD140
Plastic Medium Power Silicon PNP Transistor - Pol=PNP / Pkg=TO126 / Vceo=80 / Ic=1 /
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Plastic Medium Power Silicon PNP Transistor
. . . Designed For Use As Audio Amplifiers And Drivers Utilizing Complementary Or Quasi
complementary circuits.
DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc
BD 136, 138, 140 are complementary with BD 135, 137, 139
Order this document by BD136/D
BD136 BD138 BD140-10
1.5 AMPERE POWER TRANSISTORS
PNP SILICON 45, 60, 80 VOLTS
10 WATTS
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BD136 BD138 BD140-10
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Collector-Emitter Sustaining Voltage*
(IC = 0.03 Adc, IB = 0)
BD 136
BD 138
BD 140
Collector Cutoff Current (vcb =
30 Vdc, Ie = 0) (vcb = 30 Vdc,
IE = 0, TC = 125 _C)
ICBO - -
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
Dc Current Gain (ic = 0.005 A,
Vce = 2 V) (ic = 0.15 A, Vce =
2 V)
(IC = 0.5 A, VCE = 2 V)
BD140-10
Collector-Emitter Saturation Voltage* (IC = 0.5 Adc, IB = 0.05 Adc)
VCE(sat)*
BD140 Datasheet
Plastic Medium Power Silicon PNP Transistor
Download: BD140 Datasheet
BD140
Plastic Medium Power Silicon PNP Transistor
ON Semiconductor)
. . . Designed For Use As Audio Amplifiers And Drivers Utilizing Complementary Or Quasi
complementary circuits.
DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc
BD 136, 138, 140 are complementary with BD 135, 137, 139
BD136 BD138 BD140-10
1.5 AMPERE POWER TRANSISTORS
PNP SILICON 45, 60, 80 VOLTS
10 WATTS
STYLE 1: PIN 1. 2. 3.
EMITTER COLLECTOR BASE
CASE 77-09 TO-225AA TYPE
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Semiconductor Components Industries, LLC, 2002
April, 2002 - Rev. 10
Publication Order Number: BD136/D
BD136 BD138 BD140-10
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Collector-Emitter Sustaining Voltage*
(IC = 0.03 Adc, IB = 0)
Collector Cutoff Current (vcb =
30 Vdc, Ie = 0) (vcb = 30 Vdc, Ie
= 0, Tc = 125 _c) Emitter Cutoff
Current
(VBE = 5.0 Vdc, IC = 0)
BD140 Datasheet
PNP Power Transistors - Pol=PNP / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-250 / FT(Hz)=-
Download: BD140 Datasheet
BD140
PNP Power Transistors - Pol=PNP / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-250 / FT(Hz)=-
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage M3D100
BD136; BD138; BD140 PNP power transistors
Product speci cation Supersedes data of 1997 Mar 26
1999 Apr 12
Philips Semiconductors
PNP power transistors
Product speci cation
BD136; BD138; BD140
FEATURES
High current (max. 1.5 A)
Low voltage (max. 80 V).
Applications
General purpose power
Applications, e.g. driver stages
in hi-fi amplifiers and television circuits.
PINNING PIN 1 2
Description
emitter collector, connected to metal part of mounting surface base
Description
Pnp Power Transistor In A To-126; Sot32 Plastic Package. Npn Complements: Bd135, Bd137 And Bd139.
handbook, halfpage
1 2 3 Top view
MAM272
Fig.1 Simplified outline (TO-126; SOT32) and symbol.
LIMITING VALUES In accordance with the Absolute
MAXIMUM RATING System (IEC 134).
SYMBOL
BD140 Datasheet
PNP GENERAL PURPOSE POWER TRANSISTORS
Download: BD140 Datasheet
BD140
PNP GENERAL PURPOSE POWER TRANSISTORS
Philips Semiconductors
Small-signal Transistors
Selection guide
LEADED DEVICES (continued)
TYPE NUMBER
PACKAGE
Bd132 Bd136-10 Bd136-16 Bd138-10 Bd138-16 Bd140-10 Bd140-16 Bd227 Bd229 Bd231 Bd330 Bd826-10
BD826-16 BD828-10 BD828-16 BD830-10 BD830-16
TO-126 TO-202
VCEO max. (V)
45 60 80 45 60 80 20 45 60 80
IC max. (mA)
3000 1500 3000 1000
Ptot max. (mW)
15000 8000
12500 15000
hFE min.
40 63 100 40 63 100 40 63 100 40 85 40 63 100 40 63 100 40 63 100
hFE max.
>40 250 160 250 160 250 160 250 375 250 160 250 160 250 160 250
fT min. (MHz)
NPN COMPL.
60 BD131
160 typ. BD135
160 typ. BD135-10
160 typ. BD135-16
160 typ. BD137
160 typ. BD137-10
BD140 Datasheet
Cross Reference Guide 1998
Download: BD140 Datasheet
BD140
Cross Reference Guide 1998
Cross Reference
Leaded Devices
1n4001 1n4002 1n4003 1n4004 1n4001 (2x) 1n4002 (2x) 1n4003 (2x) 1n4004 (2x) 1n4148
1N4148 (2x)
1N4148 (4x)
1n914 2n2222 2n2222a 2n2484 2n2857 2n2907 2n2907a 2n3019 2n3053 2n3440 2n3563 2n3904
SMD-Packages
SOD-123
SOD-323
SCD-80
SOT-23
SOT143
BAS 16-02W
BAS 16-03W
BAS16 BAL/BAR74 BAL/BAR99 BAV70 BAV74 BAV99 BAW56
SMBD914 SMBT2222 SMBT2222A BC846B BFS17P SMBT2907 SMBT2907A
BAS28 BAW100
BGX50A (Bridge)
BSS79 BFN26 BSS79B SMBT3904
2N3906 2N4032 2N4036 2N4037 2N4123 2N4124 2N4125
SMBT3906 BC856
BSS81B SMBT4124 BSS80B
SOT-323
SOT-343
BAS16W
BAV70W BAV74W BAV99W BAW56W
BAS28W
BD140 Datasheet
PNP SILICON TRANSISTORS - Pol=PNP / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-250 /
Download: BD140 Datasheet
BD140
PNP SILICON TRANSISTORS - Pol=PNP / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-250 /
BD138/BD140
PNP SILICON TRANSISTORS
Type BD136-10 BD136-16 BD138 BD140-10 BD140-16
Marking BD136-10 BD136-16 BD138 BD140-10 BD140-16
STMicroelectronics PREFERRED SALESTYPES
PNP TRANSISTOR
Description The Bd136, Bd138 And Bd140 Are Silicon Epitaxial Planar Pnp Transistors Mounted In Jedec
Sot-32 Plastic Package, Designed For Audio Amplifiers And Drivers Utilizing Complementary Or
quasi-complementary circuits.
The complementary NPN types are the BD135 BD137 and BD139.
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE
MAXIMUM RATINGS
Symbol
Parameter
VCBO VCEO VEBO
Collector-base Voltage (ie = 0) Collector-emitter Voltage (ib = 0) Emitter-base Voltage (ic = 0)
Collector Current
Collector Peak Current
Base Current Total Dissipation At Tc 25 Oc Total Dissipation At Tamb 25 Oc Storage
Temperature
Max. Operating Junction Temperature
November 2001
BD136 -45 -45
Value BD138
-60 -60 -5 -1.5 -3 -0.5 12.5 1.25 -65 to 150
BD140 -80 -80
V A W oC
BD136 / BD138 / BD140
THERMAL DATA
BD140 Datasheet
Complementary Low Voltage Transistor
Download: BD140 Datasheet
BD140
Complementary Low Voltage Transistor
BD135 - BD136 BD139 - BD140
FEATURES
Products are pre-selected in DC current gain
Application
General purpose
Description
These Epitaxial Planar Transistors Are Mounted In The Sot-32 Plastic Package. They Are Designed For
Audio Amplifiers And Drivers Utilizing Complementary Or Quasi-complementary Circuits. The Npn Types
Are The Bd135 And Bd139, And The Complementary Pnp Types Are The Bd136 And Bd140.
SOT-32
Figure 1. Internal schematic diagram
Table 1. Device Summary Order Codes Bd135-16 Bd136-16 Bd139-10 Bd139-16 Bd140-10 Bd140-16
Marking BD135-16 BD136-16 BD139-10 BD139-16 BD140-10 BD140-16
May 2008
Package SOT-32
PNP Packaging
BD135 - BD136 - BD139 - BD140
Electrical Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
2.1 Electrical Characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. 5
Package
Mechanical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . 8
BD135 - BD136 - BD139 - BD140
Electrical ratings
Table 2. Absolute
MAXIMUM RATINGS
BD140 Datasheet
Plastic-Encapsulated Transistors
Download: BD140 Datasheet
BD140
Plastic-Encapsulated Transistors
Transys
Electronics
LIMITED
TO-126 (SOT-32) Plastic Package
BD136, BD138, BD140
BD136, 138, 140 PNP PLASTIC POWER TRANSISTORS
Complementary BD135, 137, 139 Medium Power Linear and Switching
Applications
PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE
ALL DIMENSIONS IN MM
ABSOLUTE
MAXIMUM RATINGS
Collector-base Voltage (open Emitter) Collector-emitter Voltage (open Base) Collector Current Total
Power Dissipation Up To Tc = 25 C Junction Temperature Collector-emitter Saturation Voltage
IC = 0.5 A; IB = 0.05 A D.C. current gain
IC = 0.15 A; VCE = 2 V
VCBO VCEO IC Ptot Tj
136 138 140
max. 45 60 100 V
max. 45 60 80 V
VCEsat max.
Ratings (at Ta=25 C Unless Otherwise Specified) Limiting Values Collector-base Voltage (open
emitter)
Collector-emitter voltage (open base) Emitter-base voltage (open collector)
VCBO VCEO VEBO
136 138 140
max. 45 60 100 V
max. 45 60 80 V
BD136, BD138, BD140
Collector Current Base Current Total Power Dissipation Up To Ta = 25 C Derate Above 25 C Total
Power Dissipation Up To Tc = 25 C Derate Above 25 C Junction Temperature Storage Temperature
BD140 Datasheet
PNP PLASTIC POWER TRANSISTORS
Download: BD140 Datasheet
BD140
PNP PLASTIC POWER TRANSISTORS
Transys
Electronics
LIMITED
TO-126 (SOT-32) Plastic Package
BD136, BD138, BD140
BD136, 138, 140 PNP PLASTIC POWER TRANSISTORS
Complementary BD135, 137, 139 Medium Power Linear and Switching
Applications
PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE
ALL DIMENSIONS IN MM
ABSOLUTE
MAXIMUM RATINGS
Collector-base Voltage (open Emitter) Collector-emitter Voltage (open Base) Collector Current Total
Power Dissipation Up To Tc = 25 C Junction Temperature Collector-emitter Saturation Voltage
IC = 0.5 A; IB = 0.05 A D.C. current gain
IC = 0.15 A; VCE = 2 V
VCBO VCEO IC Ptot Tj
136 138 140
max. 45 60 100 V
max. 45 60 80 V
VCEsat max.
Ratings (at Ta=25 C Unless Otherwise Specified) Limiting Values Collector-base Voltage (open
emitter)
Collector-emitter voltage (open base) Emitter-base voltage (open collector)
VCBO VCEO VEBO
136 138 140
max. 45 60 100 V
max. 45 60 80 V
BD136, BD138, BD140
Collector Current Base Current Total Power Dissipation Up To Ta = 25 C Derate Above 25 C Total
Power Dissipation Up To Tc = 25 C Derate Above 25 C Junction Temperature Storage Temperature
BD140 Datasheet
Transistor
Download: BD140 Datasheet
BD140
Transistor
2n1112 2n1212 2n1217 2n1711 2n2219a 2n2222(metal) 2n2222a 2n2369 2n2369a 2n2646 2n2905a
2N2907(Metal) 2N3055 2N3440 2N3773 2N3903 2N3904 2N3906 2N4091 2N4401
U ,
60 20 75
40 60 80
250 160 60 40
I , P ,
5,00 80,00 0,03 0,08 0,50 0,80
0,80 0,40 0,80 0,40
0,20 0,36 0,20 0,36
0,60 0,40 0,60 0,40 15,00 115,00
1,00 16,00 0,20
1,00 150,00
0,63 0,36 0,35
0,60 0,35 0,60 0,35
f , h21 ,min
9,00 70,00
TO 61 TO 22 50 TO 39
250,00 300,00
50 TO 18 50 TO 92
500,00
40 TO 18 40 TO 18
200,00 100 TO 139
200,00 100 TO 18 200,00 100 TO 18
2,00 20 TO 3
70,00 40 To 39 4,00 15 To 3 4,00 15 To 3 250,00 50 To 92 250,00 100 To 92 200,00 100 To 92 200,00
100 TO 92
200,00 150 TO 92 200,00 150 TO 92