BD679 Datasheet
Darlington Bipolar Transistor, NPN, 80V, TO-126, 3-Pin
Download: BD679 Datasheet 
BD679
Darlington Bipolar Transistor, NPN, 80V, TO-126, 3-Pin
DATA SHEET
BD675 SERIES
NPN SILICON POWER DARLINGTON TRANSISTOR
TO-126 CASE
Description The Central Semiconductor Bd675 Series Are Npn Silicon Darlington Power Transistors,
Available In The Plastic To-126 Package, And Are Designed For Audio And Video Output
Applications.
MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current Peak Collector Current Base Current Power Dissipation Operating And Storage
Junction Temperature Thermal Resistance Thermal Resistance
SYMBOL VCBO VCEO VEBO
IC ICM IB PD
BD675 BD677 BD679 BD681 BD683
80 100 120 140
60 80 100 120
4 6 100 40
-65 to +150 3.12 100
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
ICBO ICEO IEBO BVCEO VCE(SAT) VBEON hFE fhfe
VCB=Rated VCBO
VCB= Rated VCBO, TC=150 C
VCE= Rated VCEO
VEB=5.0V
IC=50mA
BD679 Datasheet
NPN PLASTIC POWER DARLINGTON TRANSISTORS
Download: BD679 Datasheet
BD679
NPN PLASTIC POWER DARLINGTON TRANSISTORS
Continental Device India
An ISO/TS 16949 and ISO 9001 Certified Company
BD675, BD675A BD677, BD677A BD679, BD679A BD681, BD683
TO126 Plastic Package
Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684
ABSOLUTE
MAXIMUM RATINGS
Description
SYMBOL
Collector Base Voltage Collector Emitter Voltage
Emitter Base Voltage Collector Current Base Current Total Power Dissipation@ Ta=25oc Derate Above 25
C Total Power Dissipation@ Tc=25oc Derate Above 25 C Operating & Storage Junction
Temperature Range
VCBO VCEO VEBO
IC IB PD
BD675 BD675A
677 679 681 683
677A 679A
80 100 120
5.0 4.0.1
- 55 to + 150
THERMAL RESISTANCE From Junction to case Junction to Ambient in free air
Rth(j-c) Rth (j-a)
3.13 100
ELECTRICAL CHARACTERISTICS (Tc=25 C unless specified otherwise)
Description
SYMBOLTEST CONDITION
Collector Emitter Voltage Collector-Cut off Current
BD679 Datasheet
Plastic Medium-Power Silicon NPN Darlingtons
Download: BD679 Datasheet
BD679
Plastic Medium-Power Silicon NPN Darlingtons
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD675/D
. . . For Use As Output Devices In Complementary General-purpose Amplifier Applica-
tions.
High DC Current Gain -
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
Monolithic Construction
Bd675, 675a, 677, 677a, 679, 679a, 681 Are Complementary With Bd676, 676a, 678, 678a, 680, 680a, 682
BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
MAXIMUM RATINGS Rating
Collector-Emitter Voltage
Collector-base Voltage Emitter-base Voltage
Collector Current
Base Current Total Device Dissipation
@TC = 25_C
Derate Above 25_c Operating And Storage Junction
Temperating Range
Symbol VCEO VCB VEB
IC IB PD
BD675 BD677 BD679 BD675A BD677A BD679A
40 0.32
- 55 to + 150
BD681 100
Unit Vdc Adc
Watts W/_C
Thermal Characteristics Characteristic
Thermal
Resistance, Junction to Case
Symbol JC
PD, POWER DISSIPATION (WATTS)
50 45 40 35 30 25 20 15 10 5.0
15 30 45 60 75 90 105 120 135 150 165 TC, CASE TEMPERATURE ( C)
Figure 1. Power Temperature Derating
Preferred Devices Are Motorola Recommended Choices For Future Use And Best Overall Value. Rev 7
BD679 Datasheet
TRANS DARLINGTON NPN 80V 4A 3TO-225AA BOX
Download: BD679 Datasheet
BD679
TRANS DARLINGTON NPN 80V 4A 3TO-225AA BOX
BD675, BD675A, BD677, BD677, BD679A, BD681*
Preferred Device
Plastic Medium Power Silicon NPN Darlingtons
This Series Of Plastic, Medium Power Silicon Npn Darlington Transistors Can Be Used As Output
devices in complementary general purpose amplifier
Applications.
FEATURES
Pb Free Package is Available*
High DC Current Gain:
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
Monolithic Construction
BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with
BD676, 676A, 678, 678A, 680, 680A, 682
BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
MAXIMUM RATINGS
Rating
Symbol
Collector Emitter Voltage BD675, A VCEO
BD677, A
BD679, A
Collector Base Voltage BD675, A VCBO
BD677, A
BD679, A
Emitter Base Voltage Collector Current
Base Current Total Device Dissipation @ Tc
= 25 C
Derate above 25 C
VEBO IC IB PD
Operating And Storage Junction Temperature Range
BD679 Datasheet
TRANS DARLINGTON NPN 80V 4A 3SOT-32
Download: BD679 Datasheet
BD679
TRANS DARLINGTON NPN 80V 4A 3SOT-32
BD677/A/679/A/681
BD678/A/680/A/682
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
STMicroelectronics PREFERRED SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES s MONOLITHIC DARLINGTON
CONFIGURATION s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
Application s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
Description The Bd677, Bd677a, Bd679, Bd679a And Bd681 Are Silicon Epitaxial-base Npn Power
Transistors In Monolithic Darlington Configuration Mounted In Jedec Sot-32 Plastic Package. They Are
intended for use in medium power linar and switching
Applications The Complementary Pnp Types Are Bd678, Bd678a, Bd680, Bd680a And Bd682 Respectively.
SOT-32
INTERNAL SCHEMATIC DIAGRAM
R1 Typ.= 7K
R2 Typ.= 230
ABSOLUTE
MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
Collector Current
ICM Collector Peak Current
Base Current
Ptot Total Dissipation at Tc 25 oC
BD679 Datasheet
Complementary Power Darlington Transistors
Download: BD679 Datasheet
BD679
Complementary Power Darlington Transistors
BD6xxx
FEATURES
Good hFE linearity
High fT frequency
Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Applications
Linear and switching industrial equipment
Description
The Devices Are Manufactured In Planar Base Island Technology With Monolithic Darlington
configuration.
SOT-32 Figure 1. Internal schematic diagram
R1 typ.= 15 K
Table 1. Device Summary Order Codes Bd677 Bd677a Bd678 Bd678a Bd679 Bd679a Bd680 Bd680a Bd681 Bd682
Marking BD677 BD677A BD678 BD678A BD679 BD679A BD680 BD680A BD681 BD682
January 2008
Package SOT-32
R2 typ.= 100 Packaging Tube
BD6xxx
Absolute
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
2.1 Typical Characteristic (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . 6
2.2 Test Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 8
Package
Mechanical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
BD679 Datasheet
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Download: BD679 Datasheet
BD679
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
BD677/A/679/A/681 BD678/A/680/A/682
Sgs-thomson Preferred Salestypes S Complementary Pnp - Npn Devices S Monolithic Darlington
CONFIGURATION s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
Application s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
Description The Bd677, Bd677a, Bd679, Bd679a And Bd681 Are Silicon Epitaxial-base Npn Power
Transistors In Monolithic Darlington Configuration Mounted In Jedec Sot-32 Plastic Package. They Are
intended for use in medium power linar and switching
Applications The Complementary Pnp Types Are Bd678, Bd678a, Bd680, Bd680a And Bd682 Respectively.
SOT-32
INTERNAL SCHEMATIC DIAGRAM
R1 Typ.= 7K
R2 Typ.= 230
ABSOLUTE
MAXIMUM RATINGS
S ym b o l
P ar am et e r
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emit ter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
Collector Current
ICM Collector Peak Current
Base Current
Ptot Total Dissipation at Tc 25 oC
Max. O perating Junction Temperature
For PNP types voltage and current values are negative.
September 1997
BD679 Datasheet
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR
Download: BD679 Datasheet
BD679
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR
BD677/A/679/A/681
BD678/A/680/A/682
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
STMicroelectronics PREFERRED SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES s MONOLITHIC DARLINGTON
CONFIGURATION s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
Application s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
Description The Bd677, Bd677a, Bd679, Bd679a And Bd681 Are Silicon Epitaxial-base Npn Power
Transistors In Monolithic Darlington Configuration Mounted In Jedec Sot-32 Plastic Package. They Are
intended for use in medium power linar and switching
Applications The Complementary Pnp Types Are Bd678, Bd678a, Bd680, Bd680a And Bd682 Respectively.
SOT-32
INTERNAL SCHEMATIC DIAGRAM
R1 Typ.= 7K
R2 Typ.= 230
ABSOLUTE
MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
Collector Current
ICM Collector Peak Current
Base Current
Ptot Total Dissipation at Tc 25 oC
BD679 Datasheet
Complementary Darlington Power Transistor
Download: BD679 Datasheet
BD679
Complementary Darlington Power Transistor
BD677/A/679/A/681
BD678/A/680/A/682
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
STMicroelectronics PREFERRED SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES s MONOLITHIC DARLINGTON
CONFIGURATION s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
Application s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
Description The Bd677, Bd677a, Bd679, Bd679a And Bd681 Are Silicon Epitaxial-base Npn Power
Transistors In Monolithic Darlington Configuration Mounted In Jedec Sot-32 Plastic Package. They Are
intended for use in medium power linar and switching
Applications The Complementary Pnp Types Are Bd678, Bd678a, Bd680, Bd680a And Bd682 Respectively.
SOT-32
INTERNAL SCHEMATIC DIAGRAM
R1 Typ.= 7K
R2 T yp.= 230
ABSOLUTE
MAXIMUM RATINGS
Symbol
Pa ram e te r
VCBO Collect or-Base Voltage (IE = 0)
VCEO Collect or-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
Collector Current
ICM Collector Peak Current
Base Current
Ptot Tot al Dissipation at Tc 25 oC
BD679 Datasheet
NPN PLASTIC POWER DARLINGTON TRANSISTORS
Download: BD679 Datasheet
BD679
NPN PLASTIC POWER DARLINGTON TRANSISTORS
Transys
Electronics
LIMITED
BD675, BD675A BD677, BD677A BD679, BD679A BD681, BD683
TO126 Plastic Package
Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684
ABSOLUTE
MAXIMUM RATINGS
Description
SYMBOL
BD675 BD675A
677 679 681 683 677A 679A
Collector Base Voltage Collector Emitter Voltage
Emitter Base Voltage Collector Current Base Current Total Power Dissipation@ Tc=25 Oc Derate Above
25OC Operating & Storage Junction
Temperature Range
VCBO VCEO VEBO
IC IB PD
80 100 120
40 0.32 - 55 to + 150
THERMAL RESISTANCE From Junction to case
Rth(j-c)
ELECTRICAL CHARACTERISTICS (Tc=25 C unless specified otherwise)
Description Collector Emitter Voltage
Collector-Cut off Current Emitter cut off Current
SYMBOL TEST CONDITION
VCEO* IC =50mA, IB =0
BD675/BD675A
BD679 Datasheet
Transistor
Download: BD679 Datasheet
BD679
Transistor
2n1112 2n1212 2n1217 2n1711 2n2219a 2n2222(metal) 2n2222a 2n2369 2n2369a 2n2646 2n2905a
2N2907(Metal) 2N3055 2N3440 2N3773 2N3903 2N3904 2N3906 2N4091 2N4401
U ,
60 20 75
40 60 80
250 160 60 40
I , P ,
5,00 80,00 0,03 0,08 0,50 0,80
0,80 0,40 0,80 0,40
0,20 0,36 0,20 0,36
0,60 0,40 0,60 0,40 15,00 115,00
1,00 16,00 0,20
1,00 150,00
0,63 0,36 0,35
0,60 0,35 0,60 0,35
f , h21 ,min
9,00 70,00
TO 61 TO 22 50 TO 39
250,00 300,00
50 TO 18 50 TO 92
500,00
40 TO 18 40 TO 18
200,00 100 TO 139
200,00 100 TO 18 200,00 100 TO 18
2,00 20 TO 3
70,00 40 To 39 4,00 15 To 3 4,00 15 To 3 250,00 50 To 92 250,00 100 To 92 200,00 100 To 92 200,00
100 TO 92
200,00 150 TO 92 200,00 150 TO 92