BS170 Datasheet
TRANSISTOR, DMOS, Small Signal, Plastic, N-Channel, TO-92
Download: BS170 Datasheet 
BS170
TRANSISTOR, DMOS, Small Signal, Plastic, N-Channel, TO-92
General Semiconductor
GENFET Power MOSFETs
N-Channel MOSFETs
TO-220
Mfr. s Type
TO-252
TO-263
Config.
Power (W)
Current (A)
Volt (V)
RDS (on) ( )
GF2208 Single
2.5 13.0
30 0.0080
GF2524 Dual
5.8/ 30 0.0370/
0.0180
GF2918 Dual
30 0.0180
GF4410 Single
2.5 10.0
30 0.0135
GF4412 Single
BS170 Datasheet
Transistor, MOSFET, N Channel, .2A, 60V, Pkg Style TO92
Download: BS170 Datasheet
BS170
Transistor, MOSFET, N Channel, .2A, 60V, Pkg Style TO92
Field Effect Transistors and Power TMOS MOSFETs
ON Semiconductor
Field Effect Transistors
Jfets Operate In The Depletion Mode. They Are Available In Both P- And N-channel And Are Offered In
both Through-hole and Surface Mount Packages.
Applications Include Generalpurpose Amplified, Switches And Choppers, And Rf Amplifiers And Mixers.
These Devices Are Economical And Very Rugged. The Drain And Source Are Interchangeable On Many
typical FETs.
Jfet Low-frequency/low-noise (case 29-04 To-226aa (to-92) N-channel) The Following Table Is A
listing of small-signal JFETs intended for low-noise
Applications In The Audio Range. These Devices Exhibit Good Linearity And Are Candidates For Hi-fi
and instrumentation equipment.
Mfr. s Type
Re Yfs @ f
mmho Min.
Re Yos @ f
mho Max.
Ciss (pF) Max.
Crss (pF) Min.
V(BR)GSS V(BR)GDO
(V) Min.
VGS(off) (V)
Min. Max.
IDSS (mA) Min. Max.
2n5458 1.5 1.0 50 1.0 7.0 3.0 25 1.00 7.0 2.0 9.0 5 2n5457 1.0 50 1.0 7.0 3.0 25 0.50 6.0 1.0 5.0 5
JFET Low-Frequency/Low-Noise (Case 29-04 TO-226AA (TO-92) P-Channel)
2n5460 1.0 75 1.0 7.0 2.0 40 0.75 6.0 1.0 5.0 7 2n5461 1.5 1.0 75 1.0 7.0 2.0 40 1.00 7.5 2.0 9.0 7
2N5462 2.0 1.0 75 1.0 7.0 2.0 40 1.80 9.0 4.0 16.0 7
Jfet High-frequency Amplifiers (case 29-04 To-226aa (to-92) N-channel) The Following Is A
listing of small signal JFETs that are intended for hi-frequency
Applications. These Are Candidates For Vhf/uhf Oscillators, Mixers And Front-end Amplifiers.
Mfr. s Type
Re Yfs @ f
BS170 Datasheet
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
Download: BS170 Datasheet
BS170
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
FEATURES
High Input Impedance Fast Switching Speed Cmos Logic Compatible Input No Thermal Runaway Or
Secondary
Breakdown
MECHANICAL DATA
Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,
Method 208 Pin Connection: See Diagram Weight: 0.18 grams (approx.)
MAXIMUM RATINGS @ TA = 25 C unless otherwise specified
Characteristic Drain-source Voltage Drain-gate Voltage Gate-source-voltage (pulsed) Drain Current
(continuous) Power Dissipation @tc = 25 C (note 1) Junction Temperature Operating And Storage
Temperature Range
BOTTOM S G D
Dim Min Max
4.45 4.70
4.46 4.70
0.41 0.63
3.43 3.68
2.42 2.67
1.14 1.40
All Dimensions in mm
Symbol VDSS VDGS VGS ID Pd Tj
Value 60 20 300 830 150
-55 to +150
Unit V mA
mW C C
Inverse Diode
@ TA = 25 C unless otherwise specified
Characteristic Maximum Forward Current (continuous) Forward Voltage Drop (typ.) @ Vgs = 0, If =
0.5A, Tj = 25 C
Symbol
Electrical Characteristics @ TA = 25 C unless otherwise specified
BS170 Datasheet
N-Channel Enhancement Mode Field Effect Transistor; Package: TO-92; No Of Pins: 3;
Download: BS170 Datasheet
BS170
N-Channel Enhancement Mode Field Effect Transistor; Package: TO-92; No Of Pins: 3;
BS170 / MMBF170 - N-Channel Enhancement Mode Field Effect Transistor
March 2009
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General
Description
These N-channel Enhancement Mode Field Effect Transistors Are Produced Using Fairchild's
Proprietary, High Cell Density, Dmos Technology. These Products Have Been Designed To Minimize
On-state Resistance While Provide Rugged, Reliable, And Fast Switching Performance. They Can Be Used
in most
Applications Requiring Up To 500ma Dc. These Products Are Particularly Suited For Low Voltage, Low
current
Applications Such As Small Servo Motor Control, Power Mosfet Gate Drivers, And Other Switching
Applications.
FEATURES
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
TO - 92
SOT - 23
Absolute
MAXIMUM RATINGS Ta = 25 C unless otherwise noted
Symbol
Parameter
VDSS VDGR VGSS ID
Drain-Source Voltage
Drain-Gate Voltage (RGS 1M )
Gate-Source Voltage Drain Current - Continuous
- Pulsed
Operating and Storage Temperature Range
BS170 Datasheet
N-Channel Enhancement Mode Field Effect Transistor
Download: BS170 Datasheet
BS170
N-Channel Enhancement Mode Field Effect Transistor
April 1995
BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor
General
Description
These N-channel Enhancement Mode Field Effect Transistors Are Produced Using Fairchild's
Proprietary, High Cell Density, Dmos Technology. These Products Have Been Designed To Minimize
On-state Resistance While Provide Rugged, Reliable, And Fast Switching Performance. They Can Be Used
in most
Applications Requiring Up To 500ma Dc. These Products Are Particularly Suited For Low Voltage, Low
current
Applications Such As Small Servo Motor Control, Power Mosfet Gate Drivers, And Other Switching
Applications.
Features High Density Cell Design For Low Rds(on). Voltage Controlled Small Signal Switch. Rugged
and reliable. High saturation current capability.
Absolute
MAXIMUM RATINGS
Symbol Parameter
TA = 25 C unless otherwise noted BS170
Drain-Source Voltage
Drain-Gate Voltage (RGS < 1M )
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
500 1200
Maximum Power Dissipation
Derate Above 25 C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds
THERMAL CHARACTERISTICS
Thermal Resistacne, Junction-to-Ambient
BS170 Datasheet
N-Channel Enhancement Mode Field Effect Transistor
Download: BS170 Datasheet
BS170
N-Channel Enhancement Mode Field Effect Transistor
April 1995
BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor
General
Description
These N-channel Enhancement Mode Field Effect Transistors Are Produced Using Fairchild's
Proprietary, High Cell Density, Dmos Technology. These Products Have Been Designed To Minimize
On-state Resistance While Provide Rugged, Reliable, And Fast Switching Performance. They Can Be Used
in most
Applications Requiring Up To 500ma Dc. These Products Are Particularly Suited For Low Voltage, Low
current
Applications Such As Small Servo Motor Control, Power Mosfet Gate Drivers, And Other Switching
Applications.
Features High Density Cell Design For Low Rds(on). Voltage Controlled Small Signal Switch. Rugged
and reliable. High saturation current capability.
Absolute
MAXIMUM RATINGS
Symbol Parameter
TA = 25 C unless otherwise noted BS170
Drain-Source Voltage
Drain-Gate Voltage (RGS < 1M )
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
500 1200
Maximum Power Dissipation
Derate Above 25 C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds
THERMAL CHARACTERISTICS
Thermal Resistacne, Junction-to-Ambient
BS170 Datasheet
DMOS Transistors (N-Channel)
Download: BS170 Datasheet
BS170
DMOS Transistors (N-Channel)
.181 (4.6)
.142 (3.6)
FEATURES
High input impedance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
min..492 (12.5) .181 (4.6)
max. .022 (0.55) .098 (2.5)
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: To-92 Plastic Package Weight: Approx. 0.18 G On Special Request, This Transistor Is Also
manufactured in the pin configuration TO-18.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified
Symbol
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed)
Drain Current (continuous)
Power Dissipation at Tamb = 25 C
0.831)
Junction Temperature
Storage Temperature Range
BS170 Datasheet
TMOS FET Switching
Download: BS170 Datasheet
BS170
TMOS FET Switching
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BS170/D
N-Channel - Enhancement
1 DRAIN
3 SOURCE
MAXIMUM RATINGS Rating
Symbol
Drain - Source Voltage
Gate-Source Voltage - Continuous - Non-repetitive (tp 50 s)
Drain Current(1)
Total Device Dissipation @ TA = 25 C
Operating and Storage Junction Temperature Range
- 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
Drain-Source Breakdown Voltage (VGS = 0, ID = 100 Adc)
ON CHARACTERISTICS(2)
V(BR)DSS
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc)
VGS(Th)
Static Drain-Source On Resistance (VGS = 10 Vdc, ID = 200 mAdc)
rDS(on)
Drain Cutoff Current (VDS = 25 Vdc, VGS = 0 Vdc)
BS170 Datasheet
N-Channel Enhancement Mode Field Effect Transistor
Download: BS170 Datasheet
BS170
N-Channel Enhancement Mode Field Effect Transistor
BS170 MMBF170 N-Channel Enhancement Mode Field Effect Transistor
August 1992
BS170 MMBF170 N-Channel Enhancement Mode Field Effect Transistor
General
Description
These N-channel Enhancement Mode Field Effect Transistors Are Produced Using National's Very High
Cell Density Third Generation Dmos Technology These Products Have Been Designed To Minimize On-state
Resistance Provide Rugged And Reliable Performance And Fast Switching They Can Be Used With A
minimum of effort in most
Applications Requiring Up To 500 Ma Dc This Product Is Particularly Suited To Low Voltage Low
current
Applications Such As Small Servo Motor Controls Power Mosfet Gate Drivers And Other Switching
Applications
FEATURES
Y Efficient high density cell design approaching (3 million in2)
Y Voltage Controlled Small Signal Switch Y Rugged Y High Saturation Current Y Low Rds(on)
TO-92 BS170
TL G 11379-1
TL G 11379 - 2
TO-236AB (SOT-23) MMBF170
Absolute
MAXIMUM RATINGS
Symbol VDSS VDGR VGSS ID
Parameter Drain-source Voltage Drain-gate Voltage (rgs S 1 Mx) Gate-source Voltage Drain Current
Continuous
Pulsed
Total Power Dissipation
Derate above 25 C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes
BS170 Datasheet
TRANS MOSFET N-CH 60V 0.5A 3TO-92 BULK
Download: BS170 Datasheet
BS170
TRANS MOSFET N-CH 60V 0.5A 3TO-92 BULK
Preferred Device
Small Signal MOSFET 500 mAmps, 60 Volts
N-Channel TO-92
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage - Continuous - Non-repetitive (tp 50 s)
Drain Current (Note 1.)
Total Device Dissipation @ TA = 25 C Operating and Storage Junction
Temperature Range
1. The Power Dissipation Of The Package May Result In A Lower Continuous Drain Current.
500 mAMPS 60 VOLTS
RDS(on) = 5
N-Channel D
TO-92 CASE 29 Style 30 123 MARKING DIAGRAM & PIN ASSIGNMENT
BS170 YWW
1 Drain
3 Source
2 Gate
= Year
WW = Work Week
ORDERING INFORMATION
See Detailed Ordering And Shipping Information In The Package Dimensions Section On Page 2 Of This
data sheet.
Preferred devices are recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2000
November, 2000 - Rev. 2
Publication Order Number: BS170/D
BS170 Datasheet
N-channel Vertical D-MOS Transistor
Download: BS170 Datasheet
BS170
N-channel Vertical D-MOS Transistor
DISCRETE SEMICONDUCTORS
DATA SHEET
BS170 N-channel vertical D-MOS transistor
Product speci cation File under Discrete Semiconductors, SC13b
April 1995
Philips Semiconductors
Product speci cation
Description
N-channel Enhancement Mode Vertical D-mos Transistor In To-92 Variant Envelope And Intended For Use
in relay, high-speed and line-transformer drivers.
FEATURES
Very low RDS(on).
Direct interface to C-MOS, TTL,
High-speed switching.
No secondary breakdown.
QUICK REFERENCE DATA
Drain-source Voltage Gate-source Voltage Drain Current (dc) Total Power Dissipation Up To Tamb = 25
C Junction temperature Drain-source ON-resistance
VGS = 10 V; ID = 200 mA
RDS(on) max.
60 V 15 V 500 mA 830 mW 150 C
PINNING - TO-92 VARIANT 1 = source 2 = gate 3 = drain
PIN CONFIGURATION
handbook, halfpage
MAM146
Note: Various pin configurations available.
Fig.1 Simplified outline and symbol.
April 1995
Philips Semiconductors
Product speci cation
BS170 Datasheet
Power MOSFETs Cross Reference Guide
Download: BS170 Datasheet
BS170
Power MOSFETs Cross Reference Guide
Power MOSFETs Cross Reference
Alphanumerically
Part Number
VDSS (V)
RDS(ON) (ohm)
(A) (W)
Package
2N7000
0.2 0.4
2N7002
0.115 0.2
SOT-23
2SJ377
POWER MOLD
2SJ378
2SJ380
TO-220IS
2SJ401
TO-220FL/SM
2SJ402
TO-220FL/SM
2SJ407
TO-220IS
2SJ412
BS170 Datasheet
N-Channel 60-V (D-S) MOSFET
Download: BS170 Datasheet
BS170
N-Channel 60-V (D-S) MOSFET
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (W)
2N7000 2N7002 VQ1000J VQ1000P BS170
5 @ VGS = 10 V
7.5 @ VGS = 10 V
5.5 @ VGS = 10 V
5 @ VGS = 10 V
VGS(th) (V)
0.8 to 3 1 to 2.5 0.8 to 2.5 0.8 to 2.5 0.8 to 3
ID (A)
0.2 0.115 0.225
FEATURES
D Low On-resistance: 2.5 W D Low Threshold: 2.1 V D Low Input Capacitance: 22 Pf D Fast Switching
Speed: 7 ns D Low Input and Output Leakage
BENEFITS
D Low Offset Voltage D Low-voltage Operation D Easily Driven Without Buffer D High-speed Circuits D
Low Error Voltage
Applications
D Direct Logic-level Interface: Ttl/cmos D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, Etc. D Battery Operated Systems D Solid-state Relays
TO-226AA (TO-92)
Top View 2N7000
Dual-In-Line
Top View
Plastic: VQ1000J Sidebraze: VQ1000P
Document Number: 70226 S-04279-Rev. F, 16-Jul-01
TO-236 (SOT-23)
Top View