BS616LV1625TI Datasheet
CMOS SRAM
Download: BS616LV1625TI Datasheet 
BS616LV1625TI
CMOS SRAM
Preliminary
BSI Very Low Power/Voltage CMOS SRAM
1M x 16 or 2M x 8 bit switchable
BS616LV1625
FEATURES
Vcc operation voltage : 4.5 ~ 5.5V
Very low power consumption :
Vcc = 5.0V C-grade: 113mA (@55ns) operating current
I -grade: 115mA (@55ns) operating current
C-grade: 90mA (@70ns) operating current
I -grade: 92mA (@70ns) operating current
6.0uA (Typ.) CMOS standby current
High speed access time :
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE1, CE2 and OE options
I/O Configuration x8/x16 selectable by CIO, LB and UB pin
Description
The Bs616lv1625 Is A High Performance, Very Low Power Cmos Static Random Access Memory Organized As
1,048,676 Words By 16 Bits Or 2,097,152 Bytes By 8 Bits Selectable By Cio Pin And Operates In A Vcc
Range Of 4.5v To 5.5v Supply Voltage. Advanced Cmos Technology And Circuit Techniques Provide Both
high speed and low power
Features With A Typical Cmos Standby Current Of 6.0ua At 5.0v/25oc And Maximum Access Time Of 55ns
At 5.0v/85oc . This Device Provide Three Control Inputs And Three States Output Drivers For Easy
Memory Expansion. The Bs616lv1625 Has An Automatic Power Down Feature, Reducing The Power
Consumption Significantly When Chip Is Deselected. The Bs616lv1625 Is Available In 48-pin 12mmx20mm
TSOP1 package.
-PRODUCT FAMILY
PRODUCT FAMILY BS616LV1625TC