BS616UV4016-10 Datasheet
Very Low Power/Voltage CMOS SRAM
Download: BS616UV4016-10 Datasheet 
BS616UV4016-10
Very Low Power/Voltage CMOS SRAM
Preliminary
BSI Ultra Low Power/Voltage CMOS SRAM
256K X 16 bit
BS616UV4016
FEATURES
Wide Vcc operation voltage : C-grade: 1.8V~3.6V I-grade: 1.9V~3.6V
(Vcc_min.=1.65V at 25oC)
Ultra low power consumption :
Vcc = 2.0v C-grade: 10ma (fmax.) Operating Current I-grade: 12ma (fmax.) Operating Current 0.30ua
(Typ.) CMOS standby current
Vcc = 3.0v C-grade: 13ma (fmax.) Operating Current I-grade: 15ma (fmax.) Operating Current 0.45ua
(Typ.) CMOS standby current
High speed access time :
85ns (Max.)
-10 100ns (Max.)
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.2V
Easy expansion with CE and OE options
I/O Configuration x8/x16 selectable by LB and UB pin
Description
The Bs616uv4016 Is A High Performance, Very Low Power Cmos Static Random Access Memory Organized As
262,144 Words By 16 Bits And Operates From A Wide Range Of 1.8v To 3.6v Supply Voltage. Advanced
CMOS technology and circuit techniques provide both high speed and low power
Features With A Typical Cmos Standby Current Of 0.3ua At 2.0v/25oc And Maximum Access Time Of 85ns
At 85oc. Easy Memory Expansion Is Provided By An Active Low Chip Enable (ce) ,active Low Output
Enable(oe) And Three-state Output Drivers. The Bs616uv4016 Has An Automatic Power Down Feature,
Reducing The Power Consumption Significantly When Chip Is Deselected. The Bs616uv4016 Is Available
In Dice Form, Jedec Standard 44-pin Tsop Type Ii Package And 48-ball Bga Package.
-PRODUCT FAMILY
PRODUCT FAMILY
OPERATING TEMPERATURE
Bs616uv4016dc Bs616uv4016ec Bs616uv4016ac Bs616uv4016di Bs616uv4016ei Bs616uv4016ai
+0 O C to +70O C -40 OC to +85 OC