BS817 Datasheet
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
Download: BS817 Datasheet 
BS817
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
FEATURES
High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited For
Telephone Subsets Ideal for Automated Surface Mount Assembly
MECHANICAL DATA
Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202,
Method 208 Terminal Connections (see Diagram) Marking: S17 Weight: 0.008 Grams (approx.)
TOP VIEW
SOT-23
Dim Min Max
0.37 0.51
1.19 1.40
2.10 2.50
0.89 1.05
0.45 0.61
1.78 2.05
2.65 3.05
0.013 0.15 0.89 1.10
0.45 0.61
M 0.076 0.178
All Dimensions in mm
MAXIMUM RATINGS @ TA = 25 C unless otherwise specified
Characteristic Drain-source Voltage Drain-gate Voltage Gate-source Voltage (pulsed) (note 2) Drain
Current (continuous) Power Dissipation @ Tc = 50 C (note 1) Operating And Storage Temperature Range
Value 200 20 100 310
-55 to +150
Unit V mA
mW C
Inverse Diode @ TA = 25 C unless otherwise specified
BS817 Datasheet
TRANS MOSFET P-CH 200V 0.1A 3SOT-23
Download: BS817 Datasheet
BS817
TRANS MOSFET P-CH 200V 0.1A 3SOT-23
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
FEATURES
High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited For
Telephone Subsets Ideal for Automated Surface Mount Assembly
TOP VIEW
MECHANICAL DATA
Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202,
Method 208 Terminal Connections (see Diagram) Marking: S17 Weight: 0.008 Grams (approx.)
SOT-23
Dim Min Max
0.37 0.51
1.19 1.40
2.10 2.50
0.89 1.05
0.45 0.61
1.78 2.05
2.65 3.05
0.013 0.15 0.89 1.10
0.45 0.61
M 0.076 0.178
All Dimensions in mm
MAXIMUM RATINGS @ TA = 25 C unless otherwise specified
Characteristic Drain-source Voltage Drain-gate Voltage Gate-source Voltage (pulsed) (note 2) Drain
Current (continuous) Power Dissipation @ Tc = 50 C (note 1) Operating And Storage Temperature Range
Value 200 20 100 310 -55 to +150
Unit V mA
mW C
Inverse Diode @ TA = 25 C unless otherwise specified