CG2H40120P Datasheet
120W, GAN HEMT, 28V, DC-4.0GHZ,
Download: CG2H40120P Datasheet 
CG2H40120P
120W, GAN HEMT, 28V, DC-4.0GHZ,
CG2H40120
120 W, 28 V, RF Power GaN HEMT
Description
Cree's Cg2h40120 Is An Unmatched, Gallium Nitride (gan) High Electron Mobility Transistor (hemt).
The Cg2h40120, Operating From A 28 Volt Rail, Offers A General Purpose, Broadband Solution To A
variety of RF and microwave
Applications. Gan Hemts Offer High Efficiency, High Gain And Wide Bandwidth Capabilities Making The
Cg2h40120 Ideal For Linear And Compressed Amplifier Circuits. The Transistor Is Available In A
flange and pill package.
Package Types: 440206 and 440223 PNs: CG2H40120P and CG2H40120F
FEATURES
Up to 2.5 GHz Operation
20 dB Small Signal Gain at 1.0 GHz
15 dB Small Signal Gain at 2.0 GHz
130 W Typical PSAT 70% Efficiency at PSAT 28 V Operation
Applications
2-Way Private Radio
Broadband Amplifiers
Test Instrumentation
Large Signal Models Available for ADS and MWO Rev 1.2 - March 2020
CG2H40120F
Absolute
MAXIMUM RATINGS (not simultaneous) at 25 C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
CG2H40120P Datasheet
120W, GAN HEMT, 28V, DC-4.0GHZ,
Download: CG2H40120P Datasheet
CG2H40120P
120W, GAN HEMT, 28V, DC-4.0GHZ,
CG2H40120
120 W, 28 V, RF Power GaN HEMT
Description
Cree's Cg2h40120 Is An Unmatched, Gallium Nitride (gan) High Electron Mobility Transistor (hemt).
The Cg2h40120, Operating From A 28 Volt Rail, Offers A General Purpose, Broadband Solution To A
variety of RF and microwave
Applications. Gan Hemts Offer High Efficiency, High Gain And Wide Bandwidth Capabilities Making The
Cg2h40120 Ideal For Linear And Compressed Amplifier Circuits. The Transistor Is Available In A
flange and pill package.
Package Types: 440206 and 440223 PNs: CG2H40120P and CG2H40120F
FEATURES
Up to 2.5 GHz Operation
20 dB Small Signal Gain at 1.0 GHz
15 dB Small Signal Gain at 2.0 GHz
130 W Typical PSAT 70% Efficiency at PSAT 28 V Operation
Applications
2-Way Private Radio
Broadband Amplifiers
Test Instrumentation
Large Signal Models Available for ADS and MWO Rev 1.2 - March 2020
CG2H40120F
Absolute
MAXIMUM RATINGS (not simultaneous) at 25 C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature