D572-22GS Datasheet
D572-Type 1.5 M M Uncooled DFB FastLight Laser Module For 2.5 Gbits/s And High
Download: D572-22GS Datasheet 
D572-22GS
D572-Type 1.5 M M Uncooled DFB FastLight Laser Module For 2.5 Gbits/s And High
Advance Data Sheet February 2000
D572-type 1.5 M Uncooled Dfb Fastlight Laser Module For 2.5 Gbits/s And High Bandwidth
Applications
SONET OC-48/STM-16 systems s Telecommunications s Secure digital data systems
The Low-pro Le D572-type Laser Module Is Ideally Suited For Oc-48 Sonet And Other High-speed
digital
Applications.
FEATURES
8-pin package suitable for SONET
Applications s Narrow linewidth, distributed feedback, multiquan-
Tum-well (dfb-mqw)1510 Nm Or 1550 Nm Laser With Single-mode Ber Pigtail S Operating Temperature
Range: -25 C To +70 C (-25 C To +85 C Versions Under Development) S No Tec Required S High
Output Power: Typical 2.0 Mw Peak Power Coupled Into Single-mode Ber S Hermetically Sealed Active
Components S Internal Back-facet Monitor S Built-in Thermistor And Bias T S 25 Input Impedance S
Internal isolator s Telcordia Technologies
* TA-983 quali cation program s Bandwidth > 3 GHz
Bene ts
Easily board mounted
Gull-wing leads
No additional heat sinks required
Low-cost alternative to industry-standard, 14-pin isolated laser module (ILM)
Highly Ef Cient Dfb-mqw Laser Structure Allows For Lower Threshold And Drive Currents, And Reduced
power consumption
Description
The D572-type Uncooled Laser Module Consists Of A Laser Diode Coupled To A Single-mode Ber
Pigtail. The Device Is Available In A Standard, 8-pin Con Guration (see Figure 1 And/or Table 1)
and is ideal for long-reach (SONET) and other high-speed digital
Applications.
The module includes a narrow linewidth (
This Package Is Optimized For A 25 Input Impedance And Allows For Dc Biasing Through An Internal
Bias Tee. A Thermistor Has Been Included For Feedback To Board-level Bias Circuitry, If Needed.
* Telcordia Technologies is a trademark of Bell Communications Research
D572-type 1.5 M Uncooled Dfb Fastlight Laser Module For 2.5 Gbits/s And High-bandwidth
Applications
Advance Data Sheet February 2000
Description (continued)
The Device Characteristics Listed In This Document Are Met At 2.0 Mw Output Power. Higher- Or
Lower-power Operation Is Possible. Under Conditions Of A Xed Photodiode Current, The Change In
Optical Output Is Typically 0.5 Db Over An Operating Temperature Range Of -25 C To +70 C.
This Device Incorporates The New Laser 2000 Manufacturing Process From The Optoelectronic Products
Unit Of Lucent Technologies Microelectronics Group. Laser 2000 Is A Low-cost Platform That Targets
High-volume Manufacturing And Tighter Product Distributions On All Optical Subassemblies. This
Platform Incorporates An Advanced Optical Design That Is Produced On One Of The Highly Automated
Production Lines At The Opotelectronic Manufacturing Facility. The Laser 2000 Platform Is Quali Ed
for the central of ce and uncontrolled environments, and can be used for
Applications requiring high performance and low cost.
Table 1. Pin