IRF520 Datasheet
Transistor, Field Effect, N-Channel, 100V, 9.2A, Pkg Style TO-220AB
Download: IRF520 Datasheet 
IRF520
Transistor, Field Effect, N-Channel, 100V, 9.2A, Pkg Style TO-220AB
Intersil
Timers/Oscillators
Timers, Oscillators, Rectifiers and MOSFETs
Mfr. s Type
LM555CN
ICM7555IBA ICM7555IPA
ICM7556IPD ICM7242IPA
HA7210IB HA7210IP
Description
Timer for Time Delays and Oscillator
Applications Low Power Cmos Equivalent Of Industry Standard 555. 80 A Supply Current. Low Power
Cmos Equivalent Of Industry Standard 555. 80 A Supply Current. Dual Icm7555, Low Power Cmos
Equivalent Of Industry Standard 556. Long Range Fixed Timer. Rc Oscillator +8 Bit Counter. Fixed 256
Count. Cascadable. 32.768 Khz Micropower Clock Oscillator. Externally Programmed To Operate 10 Khz
To 10 Mhz 32.768 Khz Micropower Clock Oscillator. Externally Programmed To Operate 10 Khz To 10 Mhz
Max. Output Frequency (Astable)
10 KHz (Typ.)
1 MHz (Typ.) 1 MHz (Typ.)
1 MHz (Typ.) 2 MHz (Typ.)
10 MHz 10 MHz
Power Supply Requirement
+4.5 V to +18 V @ 15 mA
+2.0 V to +18 V @ 300 A +2.0 V to +18 V @ 300 A
+2.0 V to +18 V @ 300 A +2.0 V to +16 V @ 800 A
+2.0 V to +7 V @ 5 A +2.0 V to +7 V @ 5 A
Ultra-Fast Recovery Rectifiers
Hyper-Fast Recovery Rectifiers
Package Type
8 Lead PDIP
8 Lead SOIC 8 Lead PDIP
14 Lead PDIP 8 Lead PDIP
8 Lead SOIC 8 Lead PDIP
Mfr. s Type
RURP3060 RURP30120
VRRM (V)
600 1200
Ratings
IF(AVG) (A)
IRF520 Datasheet
9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET
Download: IRF520 Datasheet
IRF520
9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET
Data Sheet
January 2002
IRF520
This N-channel Enhancement Mode Silicon Gate Power Eld Effect Transistor Is An Advanced Power
Mosfet Designed, Tested, And Guaranteed To Withstand A Speci Ed Level Of Energy In The Breakdown
avalanche mode of operation. All of these power MOSFETs are designed for
Applications Such As Switching Regulators, Switching Convertors, Motor Drivers, Relay Drivers, And
Drivers For High Power Bipolar Switching Transistors Requiring High Speed And Low Gate Drive Power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA09594.
Ordering Information
PART NUMBER
PACKAGE
IRF520
TO-220AB
IRF520
NOTE: When ordering, use the entire part number.
FEATURES
9.2A, 100V
rDS(ON) = 0.270
SOA is Power Dissipation Limited
Single Pulse Avalanche Energy Rated
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Symbol
Packaging
JEDEC TO-220AB SOURCE DRAIN GATE
DRAIN (FLANGE)
2002 Fairchild Semiconductor
IRF520 Rev. B
IRF520 Datasheet
Power MOSFET Selection Guide
Download: IRF520 Datasheet
IRF520
Power MOSFET Selection Guide
(Power MOSFET)
Harris Power Mosfet.
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,
.
,
, .
: , , ,
.
.
Power MOSFET, IRF
Mega FET
V , I ,A R ( .),
200 400 500 1000
0,4 0,8 1,3 5,6 9,2 14,0 28,0 40,0,45 0,80 3,3 5,0 9,0 18,0 33,0,4 2,0 3,3 5,5 10,0 16,0 23,0 2,5
4,5 8,0 14,0 20,0 4,3
3,2 0,8 0,3 0,54 0,27 0,16 0,077 0,055 2,4 0,8 1,5 0,8 0,4 0,18 0,085 3,6 1,8 1,0,55 0,3 0,2 3,0 1,5
0,85 0,4 0,27 3,5
100 6,0
12,0,3
19,0,2
200 6,5
11,0,5
TO 204
IRF120 IRF140 IRF150
IRF220 IRF230 IRF240 IRF250
IRF320 IRF330 IRF340 IRF350 IRF360 IRF420 IRF430 IRF440 IRF450 IRF460
IRF9130 IRF9140 IRF9230 IRF9240
TO 220AB n
IRF510 IRF520 IRF530 IRF540
IRF610 IRF620 IRF630 IRF640
IRF710
IRF730 IRF740
IRF820 IRF830
IRF9510 IRF9520 IRF9530 IRF9540 IRF9620 IRF9630 IRF9640
TO 247
IRFP150
IRFP250
IRFP350 IRFP360 IRFP450 IRFP460 IRFPG40
IRFP9140
DIP 4 IRFD1Z2 IRFD112 IRFD120
IRF520 Datasheet
9.2A, 100V, 0.270 ?, N-Channel Power MOSFET
Download: IRF520 Datasheet
IRF520
9.2A, 100V, 0.270 ?, N-Channel Power MOSFET
Data Sheet
IRF520
November 1999 File Number 1574.4
9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET
This N-channel Enhancement Mode Silicon Gate Power Eld Effect Transistor Is An Advanced Power
Mosfet Designed, Tested, And Guaranteed To Withstand A Speci Ed Level Of Energy In The Breakdown
avalanche mode of operation. All of these power MOSFETs are designed for
Applications Such As Switching Regulators, Switching Convertors, Motor Drivers, Relay Drivers, And
Drivers For High Power Bipolar Switching Transistors Requiring High Speed And Low Gate Drive Power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA09594.
Ordering Information
PART NUMBER
PACKAGE
IRF520
TO-220AB
IRF520
NOTE: When ordering, use the entire part number.
FEATURES
9.2A, 100V
rDS(ON) = 0.270
SOA is Power Dissipation Limited
Single Pulse Avalanche Energy Rated
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Symbol
Packaging
JEDEC TO-220AB SOURCE DRAIN GATE
DRAIN (FLANGE)
Caution: These Devices Are Sensitive To Electrostatic Discharge; Follow Proper Esd Handling
Procedures.
IRF520
IRF520 Datasheet
N-Channel 100 V - 0.115 Ohm - 10 A TO-220 Low Gate Charge STripFETII Power MOSFET
Download: IRF520 Datasheet
IRF520
N-Channel 100 V - 0.115 Ohm - 10 A TO-220 Low Gate Charge STripFETII Power MOSFET
IRF520
N-CHANNEL 100V - 0.115 - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
RDS(on)
IRF520
Typical Rds(on) = 0.115 S Avalanche Rugged Technology S 100% Avalanche Tested S Low Gate Charge S
HIGH CURRENT CAPABILITY s 175 oC OPERATING TEMPERATURE
Description
This Mosfet Series Realized With Stmicroelectronics Unique Stripfet Process Has Specifically Been
Designed To Minimize Input Capacitance And Gate Charge. It Is Therefore Suitable As Primary Switch
In Advanced High-efficiency, High-frequency Isolated Dc-dc Converters For Telecom And Computer
Applications. It is also intended for any
Applications with low gate drive requirements.
Applications s HIGH CURRENT, HIGH SWITCHING SPEED
SOLENOID AND RELAY DRIVERS
REGULATOR
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, etc.)
ABSOLUTE
MAXIMUM RATINGS
Symbol
Parameter
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k )
Gate- source Voltage
Drain Current (continuous) at TC = 25 C
Drain Current (continuous) at TC = 100 C
) Drain Current (pulsed)
Total Dissipation at TC = 25 C
Derating Factor
IRF520 Datasheet
N-Channel ENHANCEMENT MODE POWER MOS TRANSISTORS
Download: IRF520 Datasheet
IRF520
N-Channel ENHANCEMENT MODE POWER MOS TRANSISTORS
IRF520 IRF520FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
IRF520 IRF520FI
100 V 100 V
R DS( on)
< 0.27 < 0.27
10 A 7A
Typical Rds(on) = 0.23 S Avalanche Rugged Technology S 100% Avalanche Tested S Repetitive
Avalanche Data At 100oc S Low Gate Charge S High Current Capability S 175oc Operating Temperature
Applications S High Current, High Speed Switching S Solenoid And Relay Drivers S Regulators S Dc-dc
& Dc-ac Converters S Motor Control, Audio Amplifiers S Automotive Environment (injection,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE
MAXIMUM RATINGS
Symbol
Parameter
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 k )
VGS Gate-source Voltage
Drain Current (cont.) at Tc = 25 oC
Drain Current (cont.) at Tc = 100 oC
) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
IRF520 Datasheet
Power MOSFETs Cross Reference Guide
Download: IRF520 Datasheet
IRF520
Power MOSFETs Cross Reference Guide
Power MOSFETs Cross Reference
Alphanumerically
Part Number
VDSS (V)
RDS(ON) (ohm)
(A) (W)
Package
2N7000
0.2 0.4
2N7002
0.115 0.2
SOT-23
2SJ377
POWER MOLD
2SJ378
2SJ380
TO-220IS
2SJ401
TO-220FL/SM
2SJ402
TO-220FL/SM
2SJ407
TO-220IS
2SJ412
IRF520 Datasheet
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 9.2A TO-220AB
Download: IRF520 Datasheet
IRF520
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 9.2A TO-220AB
Power MOSFET
IRF520, SiHF520
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) ( ) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
16 4.4 7.7 Single
D TO-220AB
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
FEATURES
Dynamic dV/dt Rating
Repetitive Avalanche Rated
175 C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC
Available
COMPLIANT
Description
Third Generation Power Mosfets From Vishay Provide The Designer With The Best Combination Of Fast
Switching, Ruggedized Device Design, Low On-resistance And Cost-effectiveness. The To-220ab Package
is universally preferred for all commercial-industrial
Applications At Power Dissipation Levels To Approximately 50 W. The Low Thermal Resistance And Low
Package Cost Of The To-220ab Contribute To Its Wide Acceptance Throughout The Industry.
TO-220AB IRF520PbF SiHF520-E3 IRF520 SiHF520
ABSOLUTE
MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage