IRGB430UD2 Datasheet

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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IRGB430UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
PD - 9.1067
IRGB430UD2
UltraFast CoPack IGBT
FEATURES
Switching-loss rating includes all "tail" losses
HEXFREDTM soft ultrafast diodes
Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
n-channel
VCES = 500V VCE(sat) 3.0V @VGE = 15V, IC = 15A
Description
Co-packaged Igbts Are A Natural Extension Of International Rectifier's Well Known Igbt Line. They
Provide The Convenience Of An Igbt And An Ultrafast Recovery Diode In One Package, Resulting In
Substantial Benefits To A Host Of High-voltage, High-current, Motor Control, Ups And Power Supply
Applications.
Absolute
MAXIMUM RATINGS
Parameter Collector-to-emitter Voltage Continuous Collector Current Continuous Collector Current
Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode
Maximum Forward Current Gate-to-emitter Voltage Maximum Power Dissipation Maximum Power Dissipation
Operating Junction And Storage Temperature Range Soldering Temperature, For 10 Sec. Mounting Torque,
6-32 or M3 Screw.
Thermal Resistance
R JC R CS R JA Wt
Parameter Junction-to-case - Igbt Junction-to-case - Diode Case-to-sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount Weight
TO-220AB
Max. 500 25 15 50 12 50 20 100 42 -55 to +150
300 (0.063 in. (1.6mm) from case) 10 lbf
in (1.1 N
Units V
Min. - - - - -
Typ. - - 0.50 - 2 (0.07)
Max. 1.2.5 - 80 -
Units C/W

IRGB430UD2 Datasheet

UltraFast CoPack IGBT

IRGB430UD2
UltraFast CoPack IGBT
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
PD - 9.1067
IRGB430UD2
FEATURES
Switching-loss rating includes all "tail" losses
HEXFREDTM soft ultrafast diodes
Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
n-channel
VCES = 500V VCE(sat) 3.0V @VGE = 15V, IC = 15A
Description
Co-packaged Igbts Are A Natural Extension Of International Rectifier's Well Known Igbt Line. They
Provide The Convenience Of An Igbt And An Ultrafast Recovery Diode In One Package, Resulting In
Substantial Benefits To A Host Of High-voltage, High-current, Motor Control, Ups And Power Supply
Applications.
Absolute
MAXIMUM RATINGS
Parameter Collector-to-emitter Voltage Continuous Collector Current Continuous Collector Current
Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode
Maximum Forward Current Gate-to-emitter Voltage Maximum Power Dissipation Maximum Power Dissipation
Operating Junction And Storage Temperature Range Soldering Temperature, For 10 Sec. Mounting Torque,
6-32 or M3 Screw.
Thermal Resistance
R JC R CS R JA Wt
Parameter Junction-to-case - Igbt Junction-to-case - Diode Case-to-sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount Weight
TO-220AB
Max. 500 25 15 50 12 50 20 100 42 -55 to +150
300 (0.063 in. (1.6mm) from case) 10 lbf
in (1.1 N
Units V
Min. - - - - -