LM529CN Datasheet
LM529 - High Speed Differential Comparator 14-PDIP 0 To 70
Download: LM529CN Datasheet 
LM529CN
LM529 - High Speed Differential Comparator 14-PDIP 0 To 70
LM161, LM361
SNOSBJ5C - MAY 1999 - REVISED MARCH 2013
LM161/LM361 High Speed Differential Comparators
Check for Samples: LM161, LM361
FEATURES
2 Independent strobes
Ensured high speed: 20 ns max
Tight delay matching on both outputs
Complementary TTL outputs
Operates from op amp supplies: 15V
Low speed variation with overdrive variation
Low input offset voltage
Versatile supply voltage range
Description
The Lm161/lm361 Is A Very High Speed Differential Input, Complementary Ttl Output Voltage Comparator
With Improved Characteristics Over The Se529/ne529 For Which It Is A Pin-for-pin Replacement. The
Device Has Been Optimized For Greater Speed Performance And Lower Input Offset Voltage. Typically
Delay Varies Only 3 Ns For Over-drive Variations Of 5 Mv To 500 Mv. It May Be Operated From Op Amp
supplies ( 15V).
Complementary outputs having maximum skew are provided.
Applications Involve High Speed Analog To Digital Converters And Zero-crossing Detectors In Disk
file systems.
CONNECTION DIAGRAMS
SOIC or PDIP Package
Figure 1. Top View Package Numbers D0014A, NFF0014A
TO-100 Package
Figure 2. Package Number LME0010C
Please Be Aware That An Important Notice Concerning Availability, Standard Warranty, And Use In
critical
Applications Of Texas Instruments Semiconductor Products And Disclaimers Thereto Appears At The End
of this data sheet. All trademarks are the property of their respective owners.
Production Data Information Is Current As Of Publication Date. Products Conform To Specifications
Per The Terms Of The Texas Instruments Standard Warranty. Production Processing Does Not Necessarily
include testing of all parameters.
LM161, LM361
SNOSBJ5C - MAY 1999 - REVISED MARCH 2013
LOGIC DIAGRAM
*Output is low when current is drawn from strobe pin.
These Devices Have Limited Built-in Esd Protection. The Leads Should Be Shorted Together Or The
Device Placed In Conductive Foam During Storage Or Handling To Prevent Electrostatic Damage To The
MOS gates.