MPS-A12 Datasheet
NPN Darlington Transistor
Download: MPS-A12 Datasheet 
MPS-A12
NPN Darlington Transistor
MPSA12
This device is designed for
Applications requiring extremely high current gain at currents to 1.0A.
Sourced from process 05.
See MPSA14 for characteristics.
Absolute
MAXIMUM RATINGS
* TA=25 C unless otherwise noted
1. Emitter 2. Base 3. Collector
Symbol
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
-55 ~ +150
* These Ratings Are Limiting Values Above Which The Serviceability Of Any Semiconductor Device May
be impaired.
Notes: 1. These Ratings Are Based On A Maximum Junction Temperature Of 150 Degrees C. 2. These Are
steady state limits. The factory should be consulted on
Applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25 C unless otherwise noted
Symbol
Parameter
Test Condition
MPS-A12 Datasheet
NPN Darlington Transistor
Download: MPS-A12 Datasheet
MPS-A12
NPN Darlington Transistor
MPSA12
Discrete POWER & Signal Technologies
This device is designed for
Applications Requiring Extremely High Current Gain At Currents To 1.0 A. Sourced From Process 05.
See MPSA14 for characteristics.
Absolute
MAXIMUM RATINGS* TA = 25 C unless otherwise noted
Symbol
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous Operating and Storage Junction Temperature Range
1.2 -55 to +150
*these Ratings Are Limiting Values Above Which The Serviceability Of Any Semiconductor Device May Be
impaired.
Notes: 1) These Ratings Are Based On A Maximum Junction Temperature Of 150 Degrees C. 2) These Are
steady state limits. The factory should be consulted on
Applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25 C unless otherwise noted
Symbol
Characteristic
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MPSA12 625 5.0 83.3 200
MPS-A12 Datasheet
TRANS DARLINGTON BJT NPN 20V 1.2A 3TO-92
Download: MPS-A12 Datasheet
MPS-A12
TRANS DARLINGTON BJT NPN 20V 1.2A 3TO-92
- - omponents 20736 Marilla Street Chatsworth
! "# $ % ! "#
FEATURES
This device is designed for
Applications requiring extremely high current gain at current to 1.0A
Pin Configuration Bottom View
MAXIMUM RATINGS*
Symbol
Rating
VCEO Collector-Emitter Voltage
VCBO Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
Thermal Characteristics
Rating
-55 to +150
Symbol
Rating
Total Device Dissipation
Derate above 25OC
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MPS-A12 Datasheet
NPN Darlington Transistor
Download: MPS-A12 Datasheet
MPS-A12
NPN Darlington Transistor
MPSA12
Darlington Transistors
NPN Silicon
FEATURES
Pb Free Packages are Available*
MAXIMUM RATINGS
Rating Collector Emitter Voltage Emitter Base Voltage Total Device Dissipation @ Ta = 25 C
Derate above 25 C
Symbol VCES VEBO PD
Value 20
625 5.0
Unit Vdc
mW/ C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Ambient RqJA
MAXIMUM RATINGS are those values beyond which device damage can occur.
Maximum Ratings Applied To The Device Are Individual Stress Limit Values (not Normal Operating
Conditions) And Are Not Valid Simultaneously. If These Limits Are Exceeded, Device Functional
operation is not implied, damage may occur and reliability may be affected.
COLLECTOR 3
BASE 2
EMITTER 1
MARKING DIAGRAM
TO 92 CASE 29 11
AYWW G
STYLE 1
IDEAL TRANSISTOR
MPS-A12 Datasheet
TRANS DARLINGTON NPN 100V 1A 3TO-92
Download: MPS-A12 Datasheet
MPS-A12
TRANS DARLINGTON NPN 100V 1A 3TO-92
NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 2 SEPT 93
FEATURES
* 1 Watt power dissipation
* 1 Amp continuous current
* Minimum gain =8K at 250mA
MPSA12
ABSOLUTE
MAXIMUM RATINGS.
Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Peak Pulse Current
Continuous Collector Current Power Dissipation At Tamb=25 C Operating And Storage Temperature Range
E-Line TO92 Compatible
VALUE 100 12 2 1
-55 to +200
UNIT V A W C
ELECTRICAL CHARACTERISTICS (at Tamb = 25 C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown Voltage
V(BR)CBO 100
IC=100 A, IE=0
Collector-Emitter Breakdown Voltage
V(BR)CES 100
IC=100 A, IB=0*
Emitter-Base Breakdown Voltage
V(BR)EBO 12
IE=10 A, IC=0