TIP120 Datasheet
Transistor, Bipolar Power, NPN, 5A, 60V, Pkg Style TO220
Download: TIP120 Datasheet 
TIP120
Transistor, Bipolar Power, NPN, 5A, 60V, Pkg Style TO220
ON Semiconductor
Bipolar Power Transistors
Plastic (isolated To-220 Type) Pin: 1 Base, 2 Collector, 3 Emitter (style 2, Case 221d-02)
Mfr. s Type
ICCont (A) Max.
VCEO(sus) (V) Min.
VCES (V) Min.
hFE Min./Max.
@ IC (A)
Resistive Switching
ts ( s) Max.
tf ( s) Max.
@ IC (A)
fT (MHz) Min.
PD (Case) Watts @ 25 C
MJF1222 MJF1272
5 100 2000 Min. 3.0 1.5 Typ. 1.50 Typ. 3.0 41
MJF44H11 MJF45H11 10
80 40/100 4.0.5 Typ. 0.14 Typ. 5.0 40
MJF63882 MJF66682 10 100 3 K/20 K 3.0 1.5 Typ. 1.50 Typ. 201
1lhfel @ MHz. 2Darlington. 3Switching tests performed with special
Application simulator circuit. See data sheet for details.
Plastic To-220 Pin: 1 Base, 2 Collector, 3 Emitter, 4 Collector (style 1, Case 221a-06)
Mfr. s Type
TIP120 Datasheet
Power Darlingtons For Linear And Switching Applications
Download: TIP120 Datasheet
TIP120
Power Darlingtons For Linear And Switching Applications
TO-220 Plastic Package
TIP120, TIP121, TIP122 TIP125, TIP126, TIP127
Boca Semiconductor
Tip120, 121, 122 Npn Plastic Power Transistors Tip125, 126, 127 Pnp Plastic Power Transistors
Power Darlingtons for Linear and Switching
Applications
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
All dim insions in m .
DIM MIN. MAX.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
ABSOLUTE
TIP120 Datasheet
NPN SILICON POWER DARLINGTONS
Download: TIP120 Datasheet
TIP120
NPN SILICON POWER DARLINGTONS
TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS
Designed for Complementary Use with TIP125, TIP126 and TIP127
65 W at 25 C Case Temperature
5 A Continuous Collector Current
Minimum hFE of 1000 at 3 V, 3 A
TO-220 PACKAGE (TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute
MAXIMUM RATINGS at 25 C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base Voltage Continuous Collector Current Peak Collector Current (see Note 1) Continuous
Base Current Continuous Device Dissipation At (or Below) 25 C Case Temperature (see Note 2)
Continuous Device Dissipation At (or Below) 25 C Free Air Temperature (see Note 3) Unclamped
Inductive Load Energy (see Note 4) Operating Junction Temperature Range Storage Temperature Range
Lead temperature 3.2 mm from case for 10 seconds
TIP120 TIP121 TIP122 TIP120 TIP121 TIP122
VEBO IC ICM IB Ptot
-65 to +150
Notes: 1. This Value Applies For Tp 0.3 Ms, Duty Cycle 10%. 2. Derate Linearly To 150 C
case temperature at the rate of 0.52 W/ C.
3. Derate linearly to 150 C free air temperature at the rate of 16 mW/ C.
4. This Rating Is Based On The Capability Of The Transistor To Operate Safely In A Circuit Of: L =
20 mH, IB(on) = 5 mA, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V.
PRODUCT INFORMATION
December 1971 - Revised September 2002 Specifications Are Subject To Change Without Notice.
TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS
electrical characteristics at 25 C case temperatur e
PARAMETER
TIP120 Datasheet
Si-Epitaxial PlanarTransistors
Download: TIP120 Datasheet
TIP120
Si-Epitaxial PlanarTransistors
TIP120, TIP121, TIP122
Darlington Transistors
Version 2004-06-21
1 = B1 2 = C2 3 = E2
Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren
Collector current - Kollektorstrom
Plastic case Kunststoffgeh use
TO-220AB
Weight approx. - Gewicht ca.
Plastic Material Has Ul Classification 94v-0 Geh Usematerial Ul94v-0 Klassifiziert
Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
MAXIMUM RATINGS (TA = 25 C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation - Verlustleistung
without cooling - ohne K hlung
with cooling - mit K hlung
TC = 25 C Ptot
Collector current - Kollektorstrom (dc)
Peak Collector current - Kollektor-Spitzenstrom ICM
TIP120 Datasheet
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
Download: TIP120 Datasheet
TIP120
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
NPN EPITAXIAL
TIP120/121/122
DARLINGTON TRANSISTOR
MEDIUM POWER TRANSISTOR SWITCHING
Applications
Complementary to TIP125/126/127
ABSOLUTE
MAXIMUM RATINGS
Characteristi:cTIP120 Collector-Base Voltage : TIP121
: TIP122
Collector-Emitter Voltage: TIP120 : TIP121 : TIP122
Emitter-base Voltage Collector Current (dc) Collector Current (pulse) Base Current (dc) Collector
Dissipation (ta=25 C) Collector Dissipation (tc=25 C) Junction Temperature Storage Temperature
Symbol VCBO
Rating 60 80 100
60 80 100 5 8 120 2 65 150 -65 ~ 150
Unit V
V A mA W C C
TO-220 1.Base 2.Collector 3.Emitter
ELECTRICAL CHARACTERISTICS (TC =25 C)
Characteristic
Collector Emitter Sustaining Voltage : TIP120
: TIP121
: TIP122
Collector Cutoff Current
: TIP120 : TIP121
: TIP122
TIP120 Datasheet
NPN Epitaxial Darlington Transistor
Download: TIP120 Datasheet
TIP120
NPN Epitaxial Darlington Transistor
TIP120/121/122
Medium Power Linear Switching
Applications
Complementary to TIP125/126/127
TO-220
1.Base 2.Collector 3.Emitter
Absolute
MAXIMUM RATINGS TC=25 C unless otherwise noted
Symbol
Parameter
Collector-Base Voltage : TIP120
: TIP121
: TIP122
Equivalent Circuit C
VEBO IC ICP IB PC
Collector-Emitter Voltage : TIP120 : TIP121 : TIP122
Emitter-base Voltage Collector Current (dc) Collector Current (pulse) Base Current (dc) Collector
Dissipation (ta=25 C) Collector Dissipation (tc=25 C) Junction Temperature Storage Temperature
- 65 ~ 150
R1 8k R2 0.12k
Electrical Characteristics TC=25 C unless otherwise noted
Symbol VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage : TIP120 : TIP121 : TIP122
Test Condition IC = 100mA, IB = 0
Min. Max. Units
TIP120 Datasheet
NPN Epitaxial Darlington Transistor; Package: TO-220; No Of Pins: 3; Container: Bulk
Download: TIP120 Datasheet
TIP120
NPN Epitaxial Darlington Transistor; Package: TO-220; No Of Pins: 3; Container: Bulk
TIP120/TIP121/TIP122 - NPN Epitaxial Darlington Transistor
TIP120/TIP121/TIP122
NPN Epitaxial Darlington Transistor
Medium Power Linear Switching
Applications
Complementary to TIP125/126/127
Equivalent Circuit C
TO-220
1.Base 2.Collector 3.Emitter
R1 @ 8kW
R2 @ 0.12k W
Absolute
MAXIMUM RATINGS* Ta = 25 C unless otherwise noted
Symbol VCBO
VEBO IC ICP IB PC
Parameter Collector-Base Voltage : TIP120
: Tip121 : Tip122 Collector-emitter Voltage : Tip120 : Tip121 : Tip122 Emitter-base Voltage
Collector Current (dc) Collector Current (pulse) Base Current (dc) Collector Dissipation (ta=25 C)
Collector Dissipation (TC=25 C) Junction Temperature Storage Temperature
* These Ratings Are Limiting Values Above Which The Serviceability Of Any Semiconductor Device May
be impaired.
Ratings 60 80 100 60 80 100 5 8 120 2 65 150
- 65 ~ 150
October 2008
Units V A mA W C C
2007 Fairchild Semiconductor
TIP120/TIP121/TIP122 Rev. 1.0.0
TIP120/TIP121/TIP122 - NPN Epitaxial Darlington Transistor
Electrical Characteristics* Ta=25 C unless otherwise noted
Symbol
TIP120 Datasheet
Plastic Medium-Power Complementary Silicon Transistors
Download: TIP120 Datasheet
TIP120
Plastic Medium-Power Complementary Silicon Transistors
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP120/D
. . . designed for general-purpose amplifier and low-speed switching
Applications.
High DC Current Gain -
hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector-Emitter Sustaining Voltage - @ 100 mAdc
Vceo(sus) = 60 Vdc (min) - Tip120, Tip125 Vceo(sus) = 80 Vdc (min) - Tip121, Tip126 Vceo(sus) = 100
Vdc (Min) - TIP122, TIP127
Low Collector-Emitter Saturation Voltage -
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
TO-220AB Compact Package
MAXIMUM RATINGS
Rating
TIP120, TIP121, TIP122, Symbol TIP125 TIP126 TIP127
Collector-emitter Voltage Collector-base Voltage
Emitter-Base Voltage
Collector Current - Continuous Peak
5.0 8.0
Base Current
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
2.0.016
Unclamped Inductive Load Energy (1)
TIP120 Datasheet
Darlington Transistors
Download: TIP120 Datasheet
TIP120
Darlington Transistors
TIP120, 121, 122, 125, 126, 127
FEATURES:
Designed for general-purpose amplifier and low speed switching
Applications.
Collector-Emitter sustaining voltage-VCEO(sus) = 60V (Minimum) - TIP120, TIP125
80V (Minimum) - TIP121, TIP126 100V (Minimum) - TIP122, TIP127.
Collector-Emitter saturation voltage-VCE(sat) = 2.0V (Maximum) at IC = 3.0A.
Monolithic construction with built-in-base-emitter shunt resistors.
Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case)
MAXIMUM RATINGS
Characteristic
Collector-emitter Voltage Collector-base Voltage Emitter-base Voltage Collector Current -continuous
-peak Base Current Total Power Dissipation At Tc = 25 C Derate Above 25 C Operating And Storage
Junction Temperature Range
A B C D E F G H I J K L M O
Symbol
VCEO VCBO VEBO
IC ICM IB
Minimum Maximum
Dimensions : Millimetres
TIP120 TIP125
TIP121 TIP126
TIP122 TIP127
5.0 8.0
65 0.52
-65 to +150
NPN TIP120 TIP121 TIP122
PNP TIP 125 TIP 126 TIP 127
5.0 Ampere Darlington Complementary Silicon Power Transistors 60 - 100 Volts 65 Watts
TO-220
TIP120 Datasheet
Designed For General-purpose Amplifier And Low-speed Switching Applications.
Download: TIP120 Datasheet
TIP120
Designed For General-purpose Amplifier And Low-speed Switching Applications.
ON Semiconductort
Plastic Medium-Power Complementary Silicon Transistors
TIP120
* TIP121*
. . . designed for general-purpose amplifier and low-speed switching
Applications.
High DC Current Gain -
hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector-Emitter Sustaining Voltage - @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) - TIP120, TIP125 = 80 Vdc (Min) - TIP121, TIP126
= 100 Vdc (Min) - TIP122, TIP127
Low Collector-Emitter Saturation Voltage -
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
TO-220AB Compact Package
MAXIMUM RATINGS
Rating
TIP120, TIP121, TIP122, Symbol TIP125 TIP126 TIP127
Collector-Emitter Voltage Collector-Base Voltage
Emitter-base Voltage Collector Current - Continuous
Peak
5.0 8.0
Base Current
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Total Power Dissipation @ TA = 25_C
TIP120 Datasheet
Plastic Medium-Power Complementary Silicon Transistors
Download: TIP120 Datasheet
TIP120
Plastic Medium-Power Complementary Silicon Transistors
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
Preferred Devices
Plastic Medium Power Complementary Silicon Transistors
Designed for general purpose amplifier and low speed switching
Applications.
FEATURES
High DC Current Gain
hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector Emitter Sustaining Voltage @ 100 mAdc
Vceo(sus) = 60 Vdc (min) Tip120, Tip125 = 80 Vdc (min) Tip121, Tip126 = 100 Vdc (min)
TIP122, TIP127
Low Collector Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built In Base Emitter Shunt Resistors
Pb Free Packages are Available*
DARLINGTON 5 AMPERE
COMPLEMENTARY SILICON POWER TRANSISTORS
60 80 100 VOLTS, 65 WATTS
MARKING DIAGRAM
TO 220AB CASE 221A
STYLE 1
TIP12xG AYWW
TIP12x x A Y WW G
= Device Code = 0, 1, 2, 5, 6, Or 7 = Assembly Location = Year = Work Week = Pb Free Package
ORDERING INFORMATION
See Detailed Ordering And Shipping Information In The Package Dimensions Section On Page 2 Of This
data sheet.
Preferred devices are recommended choices for future use and best overall value.
*for Additional Information On Our Pb Free Strategy And Soldering Details, Please Download The On
Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2005
September, 2005 Rev. 6
Publication Order Number: TIP120/D
TIP120 Datasheet
NPN SILICON POWER DARLINGTONS
Download: TIP120 Datasheet
TIP120
NPN SILICON POWER DARLINGTONS
TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS
DECEMBER 1971 - REVISED MARCH 1997
q Designed for Complementary Use with TIP125, TIP126 and TIP127
Q 65 W At 25 C Case Temperature Q 5 A Continuous Collector Current Q Minimum Hfe Of 1000 At 3 V, 3
A
TO-220 PACKAGE (TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute
MAXIMUM RATINGS at 25 C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base Voltage Continuous Collector Current Peak Collector Current (see Note 1) Continuous
Base Current Continuous Device Dissipation At (or Below) 25 C Case Temperature (see Note 2)
Continuous Device Dissipation At (or Below) 25 C Free Air Temperature (see Note 3) Unclamped
Inductive Load Energy (see Note 4) Operating Junction Temperature Range Storage Temperature Range
Lead temperature 3.2 mm from case for 10 seconds
TIP120 TIP121 TIP122 TIP120 TIP121 TIP122
VEBO IC ICM IB Ptot
-65 to +150
Notes: 1. This Value Applies For Tp 0.3 Ms, Duty Cycle 10%. 2. Derate Linearly To 150 C
case temperature at the rate of 0.52 W/ C.
3. Derate linearly to 150 C free air temperature at the rate of 16 mW/ C.
4. This Rating Is Based On The Capability Of The Transistor To Operate Safely In A Circuit Of: L =
20 mH, IB(on) = 5 mA, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V.
PRODUCT INFORMATION
Information Is Current As Of Publication Date. Products Conform To Specifications In Accordance With
The Terms Of Power Innovations Standard Warranty. Production Processing Does Not Necessarily Include
testing of all parameters.
TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS
DECEMBER 1971 - REVISED MARCH 1997
electrical characteristics at 25 C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
TIP120 Datasheet
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Download: TIP120 Datasheet
TIP120
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
TIP120/121/122 TIP125/126/127
STMicroelectronics PREFERRED SALESTYPES
Description The Tip120, Tip121 And Tip122 Are Silicon Epitaxial-base Npn Power Transistors In
Monolithic Darlington Configuration Mounted In Jedec To-220 Plastic Package. They Are Intented For
use in power linear and switching
Applications. The Complementary Pnp Types Are Tip125, Tip126 And Tip127, Respectively.
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE
MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
Collector Current
ICM Collector Peak Current
Base Current
Ptot Total Dissipation at Tcase 25 oC Tamb 25 oC
Max. Operating Junction Temperature
* For PNP types voltage and current values are negative.
March 2000
R1 Typ. = 5 K
R2 Typ. = 150
NPN PNP
TIP120 TIP125
TIP120 Datasheet
Complementary Silicon Power Darlington Transistors
Download: TIP120 Datasheet
TIP120
Complementary Silicon Power Darlington Transistors
TIP120, TIP121, TIP122 TIP125, TIP126, TIP127
Complementary power Darlington transistors
FEATURES
Low collector-emitter saturation voltage
Complementary NPN - PNP transistors
Applications
General purpose linear and switching
Description
The Devices Are Manufactured In Planar Technology With "base Island" Layout And Monolithic
Darlington Configuration. The Resulting Transistors Show Exceptional High Gain Performance Coupled
with very low saturation voltage.
TO-220
Figure 1. Internal schematic diagrams
NPN: R1= 7 K R2= 70
PNP: R1= 16 K R2= 60
Table 1. Device summary Order codes TIP120 TIP121 TIP122 TIP125 TIP126 TIP127
Marking TIP120 TIP121 TIP122 TIP125 TIP126 TIP127
Package TO-220
November 2008
Packaging Tube
Content
TIP120, TIP121, TIP122, TIP125, TIP126, TIP127
Electrical Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
2.1 Electrical Characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . 5
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . 7
Package
TIP120 Datasheet
Darlington Power Transistors (NPN)
Download: TIP120 Datasheet
TIP120
Darlington Power Transistors (NPN)
Darlington Power Transistors (NPN) TIP120/121/122
FEATURES
Designed for general-purpose amplifier and low speed switching
Applications
RoHS Compliant
MECHANICAL DATA
Case: Terminals:
Weight:
To-220, Plastic Package Solderable Per Mil-std-202, Method 208 0.08 Ounces, 2.24 Grams
TO-220
MAXIMUM RATINGS (T Ambient=25 C unless noted otherwise)
Symbol
Description
TIP120
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Continuous
Collector Current Peak
Base Current
Power Dissipation upto TC=25 C
Power Dissipation Derate above TC=25 C
Power Dissipation upto TA=25 C
Power Dissipation Derate above TA=25 C
Thermal Resistance From Junction To Ambient In Free Air Thermal Resistance From Junction To Case
Operating Junction and Storage Temperature Range